KSC1008 tm NPN Epitacial Silicon Transistor Features • Low frequency amplifier medium speed switching. • High Collector-Base Voltage : VCBO=80V. • Collector Current : IC=700mA • Collector Power Dissipation : PC=800mW TO-92 • Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base) • Non suffix “-C” means Side Collector (1.Emitter 2.Base 3.Collector) 1 2 3 KSC1008 • Complement to KSA708 : 1. Emitter 2. Base 3. Collector KSC1008C : 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector current 700 mA PC Collector Power Dissipation 800 mW TJ Junction Temperature +150 °C Tstg Storage Temperature -55 ~ +150 °C * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics * T a Symbol = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 80 V BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 60 V BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 8 V ICBO Collector Cut-off Current VCB=60V, IE=0 IEBO Emitter Cut-off Current VEB=5V, IC=0 hFE DC Current Gain VCE=2V, IC=50mA VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.2 0.4 V VBE (sat) Base-Emitter Saturation Voltage IC=500mA, IB=50mA 0.86 1.1 V fT Current Gain Bandwidth Product VCE=10V, IC=50mA Cob Output Capacitance VCB=10V, IE=0, f=1MHz 40 30 0.1 µA 0.1 µA 400 50 MHz 8 pF * DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2% hFE Classification Classification R O Y G hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 ©2006 Fairchild Semiconductor Corporation KSC1008 Rev. B 1 www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor September 2006 Device(note) Device Marking Package Packing Method Qty(pcs) Pin Definitions KSC1008COBU C1008OC TO-92 BULK -- 1.Emitter 2.Collector 3.Base KSC1008COTA C1008OC TO-92 TAPE & AMMO 2,000 1.Emitter 2.Collector 3.Base KSC1008CYBU C1008YC TO-92 BULK -- 1.Emitter 2.Collector 3.Base KSC1008CYTA C1008YC TO-92 TAPE & AMMO 2,000 1.Emitter 2.Collector 3.Base KSC1008GBU C1008G TO-92 BULK -- 1.Emitter 2.Base 3.Collector KSC1008GTA C1008G TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector KSC1008OBU C1008O TO-92 BULK -- 1.Emitter 2.Base 3.Collector KSC1008OTA C1008O TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector KSC1008RBU C1008R TO-92 BULK -- 1.Emitter 2.Base 3.Collector KSC1008RTA C1008R TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector KSC1008YBU C1008Y TO-92 BULK -- 1.Emitter 2.Base 3.Collector KSC1008YTA C1008Y TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector KSC1008YTF C1008Y TO-92 TAPE & REEL 2,000 1.Emitter 2.Base 3.Collector Note : Affix “-C-” - center collector pin. Affix “-R-, -O-, -Y-, -G-” - hHE classification Suffix “-BU” - Bulk packing, straight lead form.(see package dimensions) Suffix “-TF” - Tape& Reel packing, 0.200 In-Line Spacing lead form. (see package dimensions) SUffix “-TA” - Tape& AMMO packing, 0.200 In-Line Spacing lead form. (see package dimensions) 2 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor Package Marking and Ordering Information 240 200 IB = 1.8mA VCE = 2V 220 IB = 1.6mA 200 160 IB = 1.4mA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 180 140 IB = 1.2mA 120 IB = 1.0mA 100 IB = 0.8mA 80 IB = 0.6mA 60 IB = 0.4mA 40 180 160 140 120 100 80 60 40 20 IB = 0.2mA 20 0 0 0 5 10 15 20 25 30 35 40 45 1 50 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 1000 IC=10IB VCE=2V IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 1 VBE(sat) 0.1 VCE(sat) 0.01 1 10 100 100 10 1 0.0 1000 IC[mA], COLLECTOR CURRENT 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 100 Cob[pF],CAPACTIANCE f=1MHz IE=0 10 1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance 3 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor Typical Characteristics KSC1008 NPN Epitacial Silicon Transistor Package Dimensions TO-92 Straight Lead Form +0.25 4.58 ±0.20 4.58 –0.15 14.47 ±0.40 0.46 ±0.10 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] +0.10 0.38 –0.05 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 ±0.20 (R2.29) Dimensions in Millimeters Dimensions in Millime TO-92 0.200 In-Line Spacing Lead Form Dimensions in Inches[Millimeters] 4 KSC1008 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 5 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor TRADEMARKS