ISC 2SD2060

Inchange Semiconductor
Product Specification
2SD2060
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SB1368
・Low collector saturation voltage:
VCE(SAT)=1.7V(Max) at IC=3A,IB=0.3A
・Collector power dissipation:
PC=25W(TC=25℃)
APPLICATIONS
・With general purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
5
V
4
A
0.4
A
IC
Collector current
IB
Base current
PC
Collector dissipation
Ta=25℃
2.0
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD2060
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
80
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA ;IC=0
5
V
Collector-emitter saturation voltage
IC=3A ;IB=0.3A
0.45
1.5
V
VBE
Base-emitter on voltage
IC=3A;VCE=5V
1.0
1.5
V
ICBO
Collector cut-off current
VCB=80V; IE=0
30
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
40
hFE-2
DC current gain
IC=3A ; VCE=5V
15
Transition frequency
IC=0.5A ; VCE=5V
8.0
MHz
Collector output capacitance
f=1MHz;VCB=10V
90
pF
VCEsat
fT
COB
‹
CONDITIONS
hFE-1 Classifications
R
O
Y
40-80
70-140
120-240
2
MIN
TYP.
MAX
UNIT
240
50
Inchange Semiconductor
Product Specification
2SD2060
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SD2060
Silicon NPN Power Transistors
4