ISC 2SB1375

Inchange Semiconductor
Product Specification
2SB1375
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SD2012
・Low collector saturation voltage:
VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A
・Collector power dissipation:
PC=25W(TC=25℃)
APPLICATIONS
・Audio frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
导体
半
电
固
Fig.1 simplified outline (TO-220F) and symbol
D
N
O
IC
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
R
O
T
UC
M
E
S
GE
VALUE
UNIT
Open emitter
-60
V
Collector-emitter voltage
Open base
-60
V
Emitter-base voltage
Open collector
-7
V
-3
A
-0.5
A
N
A
H
C
Collector-base voltage
IN
IC
Collector current
IB
Base current
PC
Collector dissipation
CONDITIONS
Ta=25℃
2.0
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1375
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A ;IB=-0.2A
-1.0
-1.5
V
VBE
Base-emitter voltage
IC=-0.5A;VCE=-5V
-0.75
-1.0
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-10
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
100
hFE-2
DC current gain
IC=-2A ; VCE=-5V
15
fT
COB
体
半导
CONDITIONS
IC=-0.5A ; VCE=-5V
Collector output capacitance
IE=0; f=1MHz;VCB=-10V
IN
IC
M
E
ES
2
MAX
UNIT
V
320
R
O
T
UC
OND
G
N
A
CH
TYP.
-60
Transition frequency
固电
MIN
9
MHz
50
pF
Inchange Semiconductor
Product Specification
2SB1375
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SB1375
Silicon PNP Power Transistors
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
4