isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD357 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SB527 APPLICATIONS ·Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V 0.8 A IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ 1 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 10 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD357 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 110 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.3A; IB= 30mA VBE(on) Base-Emitter On Voltage IC= 50mA; VCE= 4V ICBO Collector Cutoff Current VCB= 25V; IE= 0 10 μA ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 0.3A; VCE= 4V CONDITIONS hFE Classifications C D E 55-110 90-180 150-300 isc Website：www.iscsemi.cn 2 MIN TYP. MAX 1.0 0.7 55 UNIT V V 300