isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 10A ·Low Saturation Voltage APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak 15 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD1127 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1127 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 25mA 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE=0 100 μA hFE DC Current Gain IC= 10A; VCE= 2V 120 V 7 V 1000 Switching times ton Turn-On Time 0.8 μs 8.0 μs IC= 5A, IB1= -IB2= 10mA toff Turn-Off Time isc Website：www.iscsemi.cn 2