isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD952 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) ·DC Current Gain: hFE= 40(Min)@ IC= -500mA ·Complement to Type BD951 APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 3.12 ℃/W 70 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD952 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.0 V VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -4V -1.4 V VCB= -80V; IE= 0 -50 μA ICBO Collector Cutoff Current -1.0 mA B VCB= -40V; IE= 0,TJ=150℃ MAX UNIT ICEO Collector Cutoff Current VCE= -40V; IB= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.2 mA hFE-1 DC Current Gain IC= -500mA ; VCE= -4V 40 hFE-2 DC Current Gain IC= -2A ; VCE= -4V 20 Current-Gain—Bandwidth Product IC= -500mA ; VCE= -4V 3 fT B MHz Switching Times ton Turn-On Time toff Turn-Off Time isc Website：www.iscsemi.cn IC= -1.0A; IB1= -IB2= -0.1A; VCC= -20V; RL= 20Ω 2 0.1 μs 0.4 μs