isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY71 DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation: PC= 29W @TC= 25℃ APPLICATIONS ·Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEX Collector-Emitter Voltage VBE= -1.5V 90 V VCER Collector-Emitter Voltage RBE= 100Ω 60 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 29 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 6.0 ℃/W B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDY71 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 55 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; RBE= 100Ω 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 4V 1.7 V ICEO Collector Cutoff Current VCE= 30V; IB= 0 0.5 mA ICEV Collector Cutoff Current VCE= 90V; VBE(off)= 1.5V VCE= 30V; VBE(off)= 1.5V,TC=150℃ 1.0 5.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.5A ; VCE= 4V 80 Current Gain-Bandwidth Product IC= 0.2A; VCE= 10V 0.8 fT isc Website：www.iscsemi.cn CONDITIONS MIN B 2 MAX UNIT 200 MHz