ISC BDY71

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BDY71
DESCRIPTION
·Continuous Collector Current-IC= 4A
·Collector Power Dissipation: PC= 29W @TC= 25℃
APPLICATIONS
·Designed for general purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
90
V
VCEX
Collector-Emitter Voltage VBE= -1.5V
90
V
VCER
Collector-Emitter Voltage RBE= 100Ω
60
V
VCEO
Collector-Emitter Voltage
55
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
2
A
PC
Collector Power [email protected]=25℃
29
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
MAX
UNIT
6.0
℃/W
B
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BDY71
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0
55
V
VCER(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; RBE= 100Ω
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 0.5A; IB= 50mA
1.0
V
VBE(on)
Base-Emitter On Voltage
IC= 0.5A; VCE= 4V
1.7
V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
0.5
mA
ICEV
Collector Cutoff Current
VCE= 90V; VBE(off)= 1.5V
VCE= 30V; VBE(off)= 1.5V,TC=150℃
1.0
5.0
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
1.0
mA
hFE
DC Current Gain
IC= 0.5A ; VCE= 4V
80
Current Gain-Bandwidth Product
IC= 0.2A; VCE= 10V
0.8
fT
isc Website:www.iscsemi.cn
CONDITIONS
MIN
B
2
MAX
UNIT
200
MHz