ISC BDX16

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BDX16
DESCRIPTION
·Contunuous Collector Current-IC= -3A
·Collector Power Dissipation: PC= 25W @TC= 25℃
Collector-Emitter Sustaining Voltage: VCEO(SUS)= -140V(Min)
APPLICATIONS
·Designed for use in general purpose switching and linear
amplifier applications requiring high breakdown voltages.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCER
Collector-Emitter Voltage RBE= 100Ω
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
n
c
.
i
m
e
VALUE
UNIT
-160
V
s
c
s
i
.
w
w
w
-150
-140
V
V
-7
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
-4
A
IB
Base Current-Continuous
-2
A
PC
Collector Power Dissipation@TC=25℃
25
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
B
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
MAX
UNIT
7.0
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BDX16
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -100mA; IB= 0
-140
V
V(BR)CER
Collector-Emitter Breakdown Voltage
IC= -100mA; RBE= 100Ω
-150
V
V(BR)CEX
Collector-Emitter Breakdown Voltage
IC= -100mA; VBE= 1.5V
-160
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -0.5A; IB= -50mA
-1.0
V
VBE(on)
Base-Emitter On Voltage
IC= -0.5A; VCE= -4V
-1.7
V
ICEX
Collector Cutoff Current
VCE= -140V;VBE= 1.5V
VCE= -140V;VBE= 1.5V,TC=150℃
-1.0
-5.0
mA
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
-1.0
mA
hFE
DC Current Gain
fT
CONDITIONS
w
isc Website:www.iscsemi.cn
TYP.
B
n
c
.
i
m
e
s
c
s
.i
ww
Current Gain-Bandwidth Product
MIN
IC= -0.5A; VCE= -4V
IC= -0.2A; VCE= -10V
2
20
MAX
UNIT
80
4
MHz