ISC BU100

Inchange Semiconductor
Product Specification
BU100
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage capability
APPLICATIONS
·For horizontal deflection output stage
of CTV receivers and high voltalge,
fast switching and industrial applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
PD
Total power dissipation
15
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-55~200
℃
TC=75℃
Inchange Semiconductor
Product Specification
BU100
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ; IB=0
60
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCE(sat)
Collector-emitter saturation voltage
IC=8A ;IB=2.5A
3.3
V
VBE(sat)
Base-emitter saturation voltage
IC=8A ;IB=2.5A
2.2
V
ICBO
Collector cut-off current
VCB=120V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
10
μA
hFE
DC current gain
IC=2A ; VCE=2V
40
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
0.1
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
90
MHz
Inchange Semiconductor
Product Specification
BU100
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3