Inchange Semiconductor Product Specification 2SC2122 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Short switching times. ·High dielectric strength. APPLICATIONS ·For use in TV horizontal deflection stage PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 325 V VEBO Emitter-base voltage Open collector 7 V 10 A 50 W IC Collector current PT Total power dissipation Tj Junction temperature 175 ℃ Tstg Storage temperature -55~175 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2122 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0; 325 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0; 7 V VCEsat Collector-emitter saturation voltage IC=8A;IB=2.5 A 3.3 V VBEsat Base-emitter saturation voltage IC=8A;IB=2.5 A 2.2 V ICBO Collector cut-off current VCB=800V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=7V;IC=0 1.0 mA hFE DC current gain IC=2.5A ; VCE=10V Transition frequency IC=0.1A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX UNIT 15 6 MHz Inchange Semiconductor Product Specification 2SC2122 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3