ISC 2SC2122

Inchange Semiconductor
Product Specification
2SC2122
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Short switching times.
·High dielectric strength.
APPLICATIONS
·For use in TV horizontal deflection stage
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
800
V
VCEO
Collector-emitter voltage
Open base
325
V
VEBO
Emitter-base voltage
Open collector
7
V
10
A
50
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
175
℃
Tstg
Storage temperature
-55~175
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2122
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA; IB=0;
325
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0;
7
V
VCEsat
Collector-emitter saturation voltage
IC=8A;IB=2.5 A
3.3
V
VBEsat
Base-emitter saturation voltage
IC=8A;IB=2.5 A
2.2
V
ICBO
Collector cut-off current
VCB=800V;IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=7V;IC=0
1.0
mA
hFE
DC current gain
IC=2.5A ; VCE=10V
Transition frequency
IC=0.1A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
15
6
MHz
Inchange Semiconductor
Product Specification
2SC2122
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3