Inchange Semiconductor Product Specification BU426AF Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ,high speed APPLICATIONS ·Intended for use in switching-mode color TV supply systems PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 6 A ICM Collector current (Pulse) 8 A IB Base current 3 A PC Collector power dissipation 65 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 2.08 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BU426AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=4A; IB=1.25A 3.0 V VBEsat-1 Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.4 V VBEsat-2 Base-emitter saturation voltage IC=4A; IB=1.25A 1.6 V ICES Collector cut-off current VCE=900V ;VBE=0 TC=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=10V; IC=0 10 mA hFE DC current gain IC=0.6A ; VCE=5V 400 UNIT V 30 60 Switching times ton Turn-on time tstg Storage time IC=2.5A ; VCC=250V IB1=0.5A 0.5 μs 3.5 μs 0.5 μs IC=2.5A ; VCC=250V IB1=0.5A; IB2=-1A tf Fall time 2 Inchange Semiconductor Product Specification BU426AF Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3