Inchange Semiconductor Product Specification BU508AFI Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection of colour TV receivers PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 8 A ICP Collector current (Pulse) 15 A Ptot Total power dissipation 50 W 150 ℃ -65~150 ℃ MAX UNIT 2.5 ℃/W Tj Tstg TC=25℃ Max.operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification BU508AFI Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0, 700 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 10 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2 A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2 A 1.3 V hFE DC current gain IC=1A; VCE=5V ICES Collector cut-off current VCE=1500V; VBE=0 TC=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA fT Transition frequency IC=0.1A; VCE=5V;f=5MHz ts Storage time tf Fall time IC=4.5A ; VCC=140V IB=1.8A; LC=0.9mH LB=3μH 2 MIN TYP. MAX UNIT 8 7 MHz 7 μs 0.55 μs Inchange Semiconductor Product Specification BU508AFI Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3