ISC BU508AFI

Inchange Semiconductor
Product Specification
BU508AFI
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3PML package
・High voltage
・High speed switching
APPLICATIONS
・For use in horizontal deflection of
colour TV receivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
8
A
ICP
Collector current (Pulse)
15
A
Ptot
Total power dissipation
50
W
150
℃
-65~150
℃
MAX
UNIT
2.5
℃/W
Tj
Tstg
TC=25℃
Max.operating junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction case
Inchange Semiconductor
Product Specification
BU508AFI
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,
700
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA ;IC=0
10
V
VCEsat
Collector-emitter saturation voltage
IC=4.5A ;IB=2 A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5A ;IB=2 A
1.3
V
hFE
DC current gain
IC=1A; VCE=5V
ICES
Collector cut-off current
VCE=1500V; VBE=0
TC=125℃
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
fT
Transition frequency
IC=0.1A; VCE=5V;f=5MHz
ts
Storage time
tf
Fall time
IC=4.5A ; VCC=140V
IB=1.8A; LC=0.9mH
LB=3μH
2
MIN
TYP.
MAX
UNIT
8
7
MHz
7
μs
0.55
μs
Inchange Semiconductor
Product Specification
BU508AFI
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3