ISC BUH517

Inchange Semiconductor
Product Specification
BUH517
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High voltage,high speed
・Low collector saturation voltage
APPLICATIONS
・Horizontal deflection stage in standard and high
reslolution displays for TV’s and monitors.
・Switching power supplies for TV’s and monitors.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1700
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
8
A
ICM
Collector current (Pulse)
15
A
IB
Base current (DC)
5
A
IBM
Base current (Pulse)
8
A
Ptot
Total power dissipation
60
W
150
℃
-65~150
℃
Tj
Tstg
Operating junction temperature
Storage temperature
TC=25℃
Inchange Semiconductor
Product Specification
BUH517
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
700
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
10
V
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=1.25A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1.25A
1.3
V
ICES
Collector cut-off current
VCE=1700V; VBE=0
Tj=125℃
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
μA
hFE
DC current gain
IC=5A ; VCE=5V
2.7
3.9
μs
190
280
ns
6
Switching times
ts
Storage time
IC=5A;IB1=1.25A;IB2=2.5A;
VCC=400V
tf
Fall time
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
2
MAX
UNIT
2.08
℃/W
Inchange Semiconductor
Product Specification
BUH517
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3