Inchange Semiconductor Product Specification BUL381 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage capability ・Very high switching speed APPLICATIONS ・Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 半 电 固 Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER OND R O T UC CONDITIONS VALUE UNIT 800 V 400 V 9 V Collector current 5 A ICM Collector current-Peak (tp<5 ms) 8 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1.78 ℃/W EMIC S E G AN VCBO Collector-base voltage Open emitter VCEO Collector-emitter voltage Open base Emitter-base voltage Open collector VEBO IC INCH TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BUL381 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; L=25mH V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.2A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.7 V VCEsat-3 Collector-emitter saturation voltage IC=3A ;IB=0.8A 1.1 V VBEsat-1 Base-emitter saturation voltage IC=1A ;IB=0.2A 1.1 V VBEsat-2 Base-emitter saturation voltage IC=2A ;IB=0.4A 1.2 V ICES Collector cut-off current VCE=800V VBE=0 Tj=125℃ 100 500 μA ICEO Collector cut-off current VCE=400V; IB=0 DC current gain IC=2A ; VCE=5V hFE-1 hFE-2 CONDITIONS 体 半导 固电 N A H INC Switching times resistive load ton Turn-on time ts Storage time tf Fall time TYP. MAX 400 UNIT V R O T UC 250 μA 1 μs 2.2 μs 0.8 μs D N O IC M E S GE DC current gain MIN IC=10mA ; VCE=5V VCC=250V ,IC=2A IB1=- IB2=0.4A tp=30μs 2 8 10 1.4 Inchange Semiconductor Product Specification BUL381 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3