Inchange Semiconductor Product Specification D44C Series Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type D45C Series ・Very low collector saturation voltage ・Fast switching APPLICATIONS ・Designed for various specific and general purpose application ・Shunt and switching regulators ・Low and high frequency inverters converters and etc. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS D44C1,2,3 Collector-base voltage 55 Open emitter 70 D44C10,11,12 90 D44C1,2,3 30 Collector-emitter voltage VEBO Emitter-base voltage IC V D44C7,8,9 D44C4,5,6 VCEO UNIT 40 D44C4,5,6 VCBO VALUE 45 Open base V D44C7,8,9 60 D44C10,11,12 80 Open collector 5 V Collector current (DC) 4 A ICM Collector current -peak 6 A IB Base current (DC) 1 A PD Total power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification D44C Series Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat PARAMETER Collector-emitter saturation voltage D44C2,3,5,6,8,9,11,12 D44C1,4,7,10 VBEsat CONDITIONS MIN TYP. MAX UNIT 0.5 V IC=1A ;IB=50mA IC=1A ;IB=0.1A Base-emitter saturation voltage IC=1A ;IB=0.1A 1.3 V ICES Collector cut-off current VCE=Rated VCES; 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA D44C3,6,9,12 hFE-1 DC current gain D44C2,5,8,11 IC=0.2A ; VCE=1V D44C1,4,7,10 hFE-2 fT 40 120 100 220 25 D44C1,4,7,10 IC=1A ; VCE=1V 10 D44C2,3,5,6,8,9,11,12 IC=2A ; VCE=1V 20 DC current gain Transition frequency IC=20mA;VCE=4V; f=1.0MHz 50 MHz Switching times tr Rise time ts Storage time tf Fall time IC=1.0A; VCC=20V IB1=-IB2=0.1A 2 0.3 μs 0.7 μs 0.4 μs Inchange Semiconductor Product Specification D44C Series Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3