isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ12002 DESCRIPTION · Collector-Emitter VoltageVCEX = 1500V ·Forward Bias safe Safe Operation Area ·Switching Time with Inductive Load APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 750 V 5 V 2.5 A 2 A VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous IE Emitter Current-Continuous 4.5 A PC Collector Power Dissipation@TC=25℃ 75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ12002 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1.8A 1.5 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 0.1 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V; ftest=1.0MHz 4 MHz Output Capacitance IE= 0; VCB= 10V; ftest=0.1MHz 50 pF Fall Time IC= 2A , IB1= 1A; LB= 12μH fT COB tf isc Website：www.iscsemi.cn CONDITIONS MIN TYP. 750 B UNIT V B B 10.5 B 2 MAX 0.65 1.0 μs