ISC MJ15025

Inchange Semiconductor
Product Specification
MJ15023 MJ15025
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Complement to type MJ15022; MJ15024
・Excellent safe operating area
・High DC current gain
hFE = 15 (Min) @ IC = 8 Adc
APPLICATIONS
・Designed for high power audio, disk head
positioners and other linear applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
MJ15023
VCBO
Collector-base voltage
-200
Open base
MJ15025
VEBO
V
-400
MJ15023
Collector-emitter voltage
Emitter-base voltage
UNIT
-350
Open emitter
MJ15025
VCEO
VALUE
V
-250
Open collector
--5
V
IC
Collector current
-16
A
ICM
Collector current-peak
-30
A
IB
Base current
-5
A
PD
Total power dissipation
250
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
0.70
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
MJ15023 MJ15025
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-emitter
sustaining voltage
CONDITIONS
MJ15023
MIN
TYP.
MAX
UNIT
-200
IC=-0.1A ;IB=0
MJ15025
V
-250
VCEsat-1
Collector-emitter saturation voltage
IC=-8A; IB=-0.8A
-1.4
V
VCEsat-2
Collector-emitter saturation voltage
IC=-16A; IB=-3.2A
-4.0
V
VBE
Base-emitter on voltage
IC=-8A ; VCE=-4V
-2.2
V
ICEO
Collector
cut-off current
-0.5
mA
-0.25
mA
-0.5
mA
ICEX
Collector
cut-off current
MJ15023
VCE=-150V; IB=0
MJ15025
VCE=-200V; IB=0
MJ15023
VCE=-200V; VBE(off)=-1.5V
MJ15025
VCE=-250V; VBE(off)=-1.5V
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-8A ; VCE=-4V
15
hFE-2
DC current gain
IC=-16A ; VCE=-4V
5
Is/b
Second breakdown collector
current with base forward biased
VCE=-50Vdc,t=0.5 s,
VCE=-80Vdc,t=0.5 s,Nonrepetitive
COB
Output capacitance
IE=0 ; VCB=-10V;f=1.0MHz
fT
Transition frequency
IC=-1A ; VCE=-10V;f=1.0MHz
2
60
-5.0
-2.0
A
600
4
pF
MHz
Inchange Semiconductor
Product Specification
MJ15023 MJ15025
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3