Inchange Semiconductor Product Specification MJ15023 MJ15025 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type MJ15022; MJ15024 ・Excellent safe operating area ・High DC current gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS ・Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS MJ15023 VCBO Collector-base voltage -200 Open base MJ15025 VEBO V -400 MJ15023 Collector-emitter voltage Emitter-base voltage UNIT -350 Open emitter MJ15025 VCEO VALUE V -250 Open collector --5 V IC Collector current -16 A ICM Collector current-peak -30 A IB Base current -5 A PD Total power dissipation 250 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 0.70 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification MJ15023 MJ15025 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS MJ15023 MIN TYP. MAX UNIT -200 IC=-0.1A ;IB=0 MJ15025 V -250 VCEsat-1 Collector-emitter saturation voltage IC=-8A; IB=-0.8A -1.4 V VCEsat-2 Collector-emitter saturation voltage IC=-16A; IB=-3.2A -4.0 V VBE Base-emitter on voltage IC=-8A ; VCE=-4V -2.2 V ICEO Collector cut-off current -0.5 mA -0.25 mA -0.5 mA ICEX Collector cut-off current MJ15023 VCE=-150V; IB=0 MJ15025 VCE=-200V; IB=0 MJ15023 VCE=-200V; VBE(off)=-1.5V MJ15025 VCE=-250V; VBE(off)=-1.5V IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-8A ; VCE=-4V 15 hFE-2 DC current gain IC=-16A ; VCE=-4V 5 Is/b Second breakdown collector current with base forward biased VCE=-50Vdc,t=0.5 s, VCE=-80Vdc,t=0.5 s,Nonrepetitive COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz fT Transition frequency IC=-1A ; VCE=-10V;f=1.0MHz 2 60 -5.0 -2.0 A 600 4 pF MHz Inchange Semiconductor Product Specification MJ15023 MJ15025 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3