ISC BD318

Inchange Semiconductor
Product Specification
BD318
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・High DC current gain
・Excellent safe operating area
・Complement to type BD317
APPLICATIONS
・Designed for high power amplifiers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
VCBO
导体
半
电
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
Absolute maximum ratings(Ta=25℃)
SYMBOL
UNIT
-100
V
-100
V
-7
V
-16
A
Collector current(peak)
-20
A
IB
Base current
-5
A
PT
Total power dissipation
200
W
Tj
Junction temperature
-65~200
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
0.875
℃/W
IC
ICM
C
U
D
ON
EMIC
S
E
G
N
A
H
C
IN
Collector current
CONDITIONS
TOR
VALUE
固
PARAMETER
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
BD318
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-0.2A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-8A ;IB=-0.8A
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-8A ;IB=-0.8A
-1.8
V
VBE(on)
Base-emitter on voltage
IC=-8A ;VCE=-2.0V
-1.5
V
ICBO
Collector cut-off current
VCB=100V;IE=0
-1.0
mA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-1.0
mA
hFE-1
DC current gain
hFE-2
fT
CONDITIONS
导体
半
电
固
DC current gain
IC=-5A ; VCE=-4V
IC=-1A ; VCE=-20V,f=0.2MHz
2
MAX
UNIT
V
25
R
O
T
UC
D
N
O
IC
IC=-10A ; VCE=-4V
N
A
H
INC
TYP.
-100
M
E
S
GE
Transition frequency
MIN
15
1
MHz
Inchange Semiconductor
Product Specification
BD318
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3