Inchange Semiconductor Product Specification BD318 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Excellent safe operating area ・Complement to type BD317 APPLICATIONS ・Designed for high power amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol VCBO 导体 半 电 Collector-base voltage Open emitter VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector Absolute maximum ratings(Ta=25℃) SYMBOL UNIT -100 V -100 V -7 V -16 A Collector current(peak) -20 A IB Base current -5 A PT Total power dissipation 200 W Tj Junction temperature -65~200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 0.875 ℃/W IC ICM C U D ON EMIC S E G N A H C IN Collector current CONDITIONS TOR VALUE 固 PARAMETER TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BD318 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ; IB=0 VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A -1.0 V VBEsat Base-emitter saturation voltage IC=-8A ;IB=-0.8A -1.8 V VBE(on) Base-emitter on voltage IC=-8A ;VCE=-2.0V -1.5 V ICBO Collector cut-off current VCB=100V;IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -1.0 mA hFE-1 DC current gain hFE-2 fT CONDITIONS 导体 半 电 固 DC current gain IC=-5A ; VCE=-4V IC=-1A ; VCE=-20V,f=0.2MHz 2 MAX UNIT V 25 R O T UC D N O IC IC=-10A ; VCE=-4V N A H INC TYP. -100 M E S GE Transition frequency MIN 15 1 MHz Inchange Semiconductor Product Specification BD318 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3