ISC MJE12007

Inchange Semiconductor
Product Specification
MJE12007
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220 package
・High voltage
・Low saturation voltage
APPLICATIONS
Suited for line-operated switchmode
applications such as:
・Fluorescent lamp ballasts
・Inverters
・Solenoid and relay drivers
・Motor controls
・Deflection circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
750
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current (DC)
2.5
A
ICM
Collector current-Peak
5
A
PD
Total power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
1.56
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
MJE12007
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=50mA; IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=1A ;IB=0.5A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=2A ;IB=1A
2.5
V
VBEsat-1
Base-emitter saturation voltage
IC=1A ;IB=0.5A
1.5
V
VBEsat-2
Base-emitter saturation voltage
IC=2A ;IB=1A
2.8
V
ICEV
Collector cut-off current
VCEV=RatedValue; VBE(off)=-1.5V
TC=100℃
0.25
2.5
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
0.25
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
3
hFE-2
DC current gain
IC=2A ; VCE=5V
2.5
2
MIN
TYP.
MAX
750
UNIT
V
Inchange Semiconductor
Product Specification
MJE12007
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3