Inchange Semiconductor Product Specification MJE12007 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220 package ・High voltage ・Low saturation voltage APPLICATIONS Suited for line-operated switchmode applications such as: ・Fluorescent lamp ballasts ・Inverters ・Solenoid and relay drivers ・Motor controls ・Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 750 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 2.5 A ICM Collector current-Peak 5 A PD Total power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.56 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification MJE12007 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=50mA; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.5A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=1A 2.5 V VBEsat-1 Base-emitter saturation voltage IC=1A ;IB=0.5A 1.5 V VBEsat-2 Base-emitter saturation voltage IC=2A ;IB=1A 2.8 V ICEV Collector cut-off current VCEV=RatedValue; VBE(off)=-1.5V TC=100℃ 0.25 2.5 mA IEBO Emitter cut-off current VEB=9V; IC=0 0.25 mA hFE-1 DC current gain IC=1A ; VCE=5V 3 hFE-2 DC current gain IC=2A ; VCE=5V 2.5 2 MIN TYP. MAX 750 UNIT V Inchange Semiconductor Product Specification MJE12007 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3