ISC MJE170

Inchange Semiconductor
Product Specification
MJE170/171/172
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type MJE180/181/182
APPLICATIONS
・For low power audio amplifier and low
current high speed switching applications
PINNING (see Fig.2)
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute Maximun Ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
MJE170
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
MJE171
Open emitter
Emitter-base voltage
-80
MJE172
-100
MJE170
-40
MJE171
UNIT
-60
Open base
MJE172
VEBO
VALUE
-60
V
V
-80
Open collector
-7
V
IC
Collector current
-3
A
ICM
Collector current-peak
-6
A
IB
Base current
-1
A
PC
Collector power dissipation
Ta=25℃
1.5
TC=25℃
12.5
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
Inchange Semiconductor
Product Specification
MJE170/171/172
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MJE170
V(BR)CEO
Collector-emitter
breakdown voltage
MJE171
MIN
TYP.
MAX
UNIT
-40
IC=-10mA;IB=0
MJE172
V
-60
-80
VCEsat-1
Collector-emitter saturation voltage
IC=-500mA ;IB=-50mA
-0.3
V
VCEsat-2
Collector-emitter saturation voltage
IC=-1.5A ;IB=-150mA
-0.9
V
VCEsat-3
Collector-emitter saturation voltage
IC=-3A ;IB=-600mA
-1.7
V
VBEsat-1
Base-emitter saturation voltage
IC=-1.5A ;IB=-150mA
-1.5
V
VBEsat-2
Base-emitter saturation voltage
IC=-3A ;IB=-600mA
-2.0
V
Base-emitter on voltage
IC=-500mA ; VCE=-1V
-1.2
V
MJE170
VCB=-60V; IE=0
TC=150℃
-0.1
-0.1
μA
mA
MJE171
VCB=-80V; IE=0
TC=150℃
-0.1
-0.1
μA
mA
MJE172
VCB=-100V; IE=0
TC=150℃
-0.1
-0.1
μA
mA
-0.1
μA
VBE
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-100mA ; VCE=-1V
50
hFE-2
DC current gain
IC=-500mA ; VCE=-1V
30
hFE-3
DC current gain
IC=-1.5A ; VCE=-1V
12
fT
Transition frequency
IC=-100mA ; VCE=-10V
50
COB
Output capacitance
IE=0 ; VCB=-10V,f=0.1MHz
2
250
MHz
50
pF
Inchange Semiconductor
Product Specification
MJE170/171/172
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3