MWI 100-12 A8 IC25 = 160 A = 1200 V VCES VCE(sat) typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 1 2 5 6 9 10 19 17 15 3 4 7 8 11 12 14, 20 Features IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings 1200 V ± 20 V 160 110 A A ICM = 200 VCEK ≤ VCES A VGES IC25 IC80 TC = 25°C TC = 80°C RBSOA VGE = ±15 V; RG = 6.8 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 6.8 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions 10 µs 640 W • NPT IGBT technology • low saturation voltage • low switching losses • switching frequency up to 30 kHz • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate Advantages Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 100 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 4 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff 2.2 2.5 4.5 2.6 V V 6.5 V 6.3 mA mA 400 nA 4 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 100 A VGE = ±15 V; RG = 6.8 Ω 100 60 600 90 16.1 14.6 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 100 A 6.5 475 nF nC RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Typical Applications • AC motor control • AC servo and robot drives • power supplies 0.19 K/W 451 VCE(sat) • space savings • reduced protection circuits • package designed for wave soldering 1-4 MWI 100-12 A8 Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 200 130 Symbol Conditions Characteristic Values min. typ. max. VF IF = 100 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.3 1.7 IRM trr IF = 120 A; diF/dt = -750 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 82 200 RthJC (per diode) Conduction A A 2.6 V V A ns 0.3 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.3 V; R0 = 12 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.27 V; R0 = 4.3 mΩ Thermal Response Module Symbol Conditions TVJ TJM Tstg operating VISOL Maximum Ratings -40...+125 +150 -40...+125 °C °C °C IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 3-6 Nm Symbol Conditions Characteristic Values min. typ. max. Rpin-chip 1.8 dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound 10 10 Weight IGBT (typ.) Cth1 = 0.397 J/K; Rth1 = 0.141 K/W Cth2 = 2.243 J/K; Rth2 = 0.049 K/W Free Wheeling Diode (typ.) Cth1 = 0.301 J/K; Rth1 = 0.238 K/W Cth2 = 2.005 J/K; Rth2 = 0.062 K/W mΩ mm mm 0.01 K/W 300 g IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 451 Dimensions in mm (1 mm = 0.0394") 2-4 MWI 100-12 A8 300 A 300 15 V 13 V VGE = 17 V 250 13 V IC IC 200 200 11 V TVJ = 25°C 11 V TVJ = 125°C 150 150 100 100 50 9V 50 9V 0 0 0 1 2 3 V 4 0 5 1 2 3 4 VCE V 6 5 VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 300 A 250 A 200 VCE = 20 V IC 15 V VGE = 17 V A 250 IF 150 200 TVJ = 125°C 150 100 100 TVJ = 125°C 50 50 TVJ = 25°C TVJ = 25°C 0 0 4 5 6 7 8 9 0 10 V 11 1 2 3 V VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 15 240 80 V A ns IRM VGE 10 VCE = 600 V IC = 100 A 180 trr TVJ = 125°C VR = 600 V IF = 100 A 120 60 t rr 40 5 20 60 IRM MWI00-12A8 0 0 100 200 300 400 nC 500 QG Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 451 0 3-4 MWI 100-12 A8 25 mJ 20 10 ns td(on) VCE = 600 V VGE = ±15 V 20 t 15 10 mJ 8 RG = 6.8 Ω TVJ = 125°C Eon 25 Eoff 6 VCE = 600 V VGE = ±15 V n RG = 6.8 Ω TVJ = 125°C 75 15 50 10 4 10 5 2 5 0 0 25 Eon 0 0 40 80 120 A 160 0 50 100 IC 0 200 A 150 IC Fig. 7 Typ. turn on energy and switching times versus collector current 40 mJ td(on) Fig. 8 Typ. turn off energy and switching times versus collector current 12 30 ns 10 mJ Eon 30 8 20 t VCE = 600 V VGE = ±15 V IC = 100 A TVJ = 125°C Eoff 20 n 6 VCE = 600 V VGE = ±15 V IC = 100 A TVJ = 125°C 10 4 10 2 Eon 0 0 0 0 10 20 30 40 Ω 50 0 0 10 20 RG 30 40 Ω 50 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 250 1 diode K/W A 200 IGBT 0.1 ICM ZthJC 150 RG = 6:8 Ω TVJ = 125°C 0.01 100 0.001 0 0 200 400 600 800 1000 1200 1400 V VCE Fig. 11 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 0.0001 0.0001 single pulse MWI100-12A8 0.001 0.01 0.1 1 s 10 t Fig. 12 Typ. transient thermal impedance 451 50 4-4