IXFH12N100F IXFT12N100F HiPerRFTM Power MOSFETs VDSS = = ID25 RDS(on) ≤ trr ≤ F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr 1000V 12A Ω 1.05Ω 250ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C 12 A IDM TC = 25°C, pulse width limited by TJM 48 A IAR TC = 25°C 12 A EAS TC = 25°C 1 J dV/dt IS ≤ IDM, di/dt < 100A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2Ω 20 V/ns PD TC = 25°C 300 W -55 ... +150 °C Features 150 °C z TJ TJM Tstg -55 ... +150 °C TAB TO-268 (IXFT) G S TAB G = Gate S = Source z TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C z Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. z Weight TO-247 TO-268 6 4 g g z z D = Drain TAB = Drain RF capable MOSFETs Double metal process for low gate resistance Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C © 2003 IXYS CORPORATION, All Rights Reserved V 5.5 V ± 100 nA 50 μA 1.5 mA DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching z DC choppers z 13.5 MHz industrial applications z Pulse generation z Laser drivers z RF amplifiers z Advantages z 1.05 Ω z Space savings High power density DS98856A(01/03) IXFH12N100F IXFT12N100F Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 8 Ciss Coss 12 S 2700 pF 305 pF 93 pF 12 ns 9.8 ns 31 ns 12 ns VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 77 nC 16 nC 42 nC 0.42 °C/W RthJC RthCS TO-247 (IXFH) Outline °C/W (TO-247) 0.21 Source-Drain Diode TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 12 A ISM Repetitive, pulse width limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 12A, -di/dt = 100A/μs 250 ns QRM VR = 100V, VGS = 0V IRM 0.8 μC 7.0 A ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Min Recommended Footprint IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2