IXYS IXFH12N100F_03

IXFH12N100F
IXFT12N100F
HiPerRFTM
Power MOSFETs
VDSS
=
=
ID25
RDS(on) ≤
trr
≤
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low
Intrinsic Rg, High dV/dt, Low trr
1000V
12A
Ω
1.05Ω
250ns
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1000
V
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
ID25
TC = 25°C
12
A
IDM
TC = 25°C, pulse width limited by TJM
48
A
IAR
TC = 25°C
12
A
EAS
TC = 25°C
1
J
dV/dt
IS ≤ IDM, di/dt < 100A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2Ω
20
V/ns
PD
TC = 25°C
300
W
-55 ... +150
°C
Features
150
°C
z
TJ
TJM
Tstg
-55 ... +150
°C
TAB
TO-268 (IXFT)
G
S
TAB
G = Gate
S = Source
z
TL
Maximum lead temperature for soldering
300
°C
TSOLD
Plastic body for 10s
260
°C
z
Md
Mounting torque (TO-247)
1.13/10
Nm/lb.in.
z
Weight
TO-247
TO-268
6
4
g
g
z
z
D
= Drain
TAB = Drain
RF capable MOSFETs
Double metal process for low gate
resistance
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ. Max.
BVDSS
VGS = 0V, ID = 1mA
1000
VGS(th)
VDS = VGS, ID = 4mA
3.0
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
TJ = 125°C
© 2003 IXYS CORPORATION, All Rights Reserved
V
5.5
V
± 100
nA
50 μA
1.5 mA
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
z
DC choppers
z
13.5 MHz industrial applications
z
Pulse generation
z
Laser drivers
z
RF amplifiers
z
Advantages
z
1.05
Ω
z
Space savings
High power density
DS98856A(01/03)
IXFH12N100F
IXFT12N100F
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 10V, ID = 0.5 • ID25, Note 1
8
Ciss
Coss
12
S
2700
pF
305
pF
93
pF
12
ns
9.8
ns
31
ns
12
ns
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
77
nC
16
nC
42
nC
0.42 °C/W
RthJC
RthCS
TO-247 (IXFH) Outline
°C/W
(TO-247)
0.21
Source-Drain Diode
TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
12
A
ISM
Repetitive, pulse width limited by TJM
48
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
IF = 12A, -di/dt = 100A/μs
250 ns
QRM
VR = 100V, VGS = 0V
IRM
0.8
μC
7.0
A
∅P
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
2.2
2.6
A2
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Min Recommended Footprint
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2