VDSS HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM ID25 RDS(on) 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface) 1.05 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, Pulse width limited by TJM IAR TC = 25°C EAR EAS TC = 25°C TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω PD Maximum Ratings 12N100 10N100 12N100 10N100 12N100 10N100 TC = 25°C TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS 1000 1000 V V ±20 ±30 V V 10 9 48 40 12 10 A A A A A A 31 1 mJ J 5 V/ns 250 W -40 ... +150 150 -40 ... +150 °C °C °C 300 °C 2500 V~ 5 g t = 1 min Weight Symbol Test Conditions VDSS VGS = 0 V, ID = 1mA 1000 V VGS(th) VDS = VGS, ID = 4mA 3.0 5.5 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) VGS = 10 V, ID = IT Notes 1 & 2 12N100 10N100 © 2002 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. ±100 nA 50 µA 1.5 mA 1.05 1.2 Ω Ω ISOPLUS 247TM (IXFR) G (TAB) D Isolated back surface* G = Gate S = Source D = Drain TAB = Drain Features z RF capable MOSFETs z Double metal process for low gate resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier Applications z DC-DC converters z Switched-mode and resonant-mode power supplies, >500kHz switching z DC choppers z 13.5 MHz industrial applications z Pulse generation z Laser drivers z RF amplifiers Advantages z ISOPLUS 247TM package for clip or spring mounting z Space savings z High power density 98934(7/02) IXFR 10N100F IXFR 12N100F Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = IT Note 1 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 8 12 S 2700 pF 305 pF Crss 93 pF td(on) 12 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 9.8 ns td(off) RG = 2 Ω (External) 31 ns 12 ns 77 nC 16 nC 42 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd RthJC 0.50 RthCK 0.15 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 12 A ISM Repetitive; pulse width limited by TJM 48 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V 250 ns t rr QRM IF = 25 A,-di/dt = 100 A/µs, VR = 100 V 0.8 µC 7 A IRM PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 2. IT test current: IXFR10N100 IT = 5A IXFR12N100 IT = 6A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1