IXYS IXFX24N100F

Advance Technical Information
HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
IXFX 24N100F VDSS = 1000 V
IXFK 24N100F ID25 =
24 A
RDS(on) = 0.39 Ω
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
PLUS 247TM (IXFX)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
VGSM
Continuous
Transient
ID25
IDM
IAR
1000
1000
V
V
±20
±30
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
24
96
24
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
3.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
10
V/ns
PD
TC = 25°C
560
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
TL
1.6 mm (0.063 in.) from case for 10 s
Md
Mounting torque
TO-264
0.4/6 Nm/lb.in.
PLUS 247
TO-264
Weight
6
10
g
g
G
(TAB)
D
TO-264 AA (IXFK)
G
D
G = Gate
S = Source
(TAB)
S
D = Drain
TAB = Drain
Features
l
l
l
l
l
RF capable MOSFETs
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1mA
1000
V
VGS(th)
VDS = VGS, ID = 8mA
3.0
5.5 V
IGSS
VGS = ±20 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Note 1
© 2002 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
±200 nA
TJ = 25°C
TJ = 125°C
l
l
l
l
l
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
100 µA
3 mA
l
0.39 Ω
l
l
PLUS 247TM package for clip or spring
mounting
Space savings
High power density
98874 (1/02)
IXFK 24N100F
IXFX 24N100F
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
V DS = 10 V; ID = 0.5 ID25
Note 1
16
Ciss
S
6600
pF
760
pF
Crss
230
pF
td(on)
22
ns
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
24
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
18
ns
td(off)
RG = 1 Ω (External)
52
ns
11
ns
195
nC
40
nC
100
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.21
RthJC
0.15
RthCK
Source-Drain Diode
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
V GS = 0 V
24
A
ISM
Repetitive;
pulse width limited by TJM
96
A
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
250
ns
trr
QRM
IF = IS,-di/dt = 100 A/µs, VR = 100 V
1.4
µC
10
A
IRM
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PLUS 247TM Outline
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
Dim.
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1