Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 12N100F VDSS IXFT 12N100F ID25 RDS(on) = 1000 V = 12 A = 1.05 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR (TAB) 1000 1000 V V ±20 ±30 V V TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 12 48 12 A A A EAR EAS TC = 25°C TC = 25°C 30 1.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 300 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque TO-247 1.13/10 Nm/lb.in. TO-247 TO-268 Weight 6 4 Symbol Test Conditions VDSS VGS = 0 V, ID = 1mA 1000 3.0 VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 © 2001 IXYS All rights reserved g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 5.5 V ±100 nA TJ = 125°C 50 µA 1.5 mA 1.05 Ω TO-268 (IXFT) Case Style G (TAB) S G = Gate, S = Source, D = Drain, TAB = Drain Features l RF capable MOSFETs l Double metal process for low gate resistance l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC choppers l 13.5 MHz industrial applications l Pulse generation l Laser drivers l RF amplifiers Advantages l Space savings l High power density 98856 (8/01) IXFH 12N100F IXFT 12N100F Symbol Test Conditions 12 S 2700 pF 305 pF Crss 93 pF td(on) 12 ns gfs V DS = 10 V; ID = 0.5 ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 8 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 9.8 ns td(off) RG = 2.0 Ω (External) 31 ns tf 12 ns Qg(on) 77 nC 16 nC 42 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.42 RthJC RthCK (TO-247) Source-Drain Diode K/W 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS V GS = 0 V 12 A ISM Repetitive; pulse width limited by TJM 48 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V 250 ns t rr QRM IF = IS,-di/dt = 100 A/µs, VR = 100 V IRM 0.8 µC 7 A Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TO-247 AD Outline 1 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 3 Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 2.87 3.12 b2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Dim. Min Recommended Footprint 2 A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025