Advanced Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 12N50F VDSS IXFT 12N50F ID25 RDS(on) = 500 V = 12 A = 0.4 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 12 48 12 A A A EAR EAS TC = 25°C TC = 25°C 20 300 mJ mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 180 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight 0.4/6 Nm/lb.in. TO-247 TO-264 6 4 Symbol Test Conditions VDSS VGS = 0 V, ID = 250uA 500 VGS(th) VDS = VGS, ID = 2.5 mA 3.0 IGSS VGS = ±20 V, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 © 2000 IXYS All rights reserved TO-268 (IXFT) Case Style G TO-264 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 5.0 V ±100 nA TJ = 125°C (TAB) 50 mA 1 mA 0.4 W (TAB) S G = Gate, S = Source, D = Drain, TAB = Drain Features l RF capable MOSFETs l Double metal process for low gate resistance l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC choppers l 13.5 MHz industrial applications l Pulse generation l Laser drivers l RF amplifiers Advantages Space savings l High power density l 98737 (07/00) IXFH 12N50F IXFT 12N50F Symbol gfs Test Conditions VDS = 10 V; ID = 0.5 • ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 6 10 S 1870 pF 290 pF Crss 90 pF td(on) 11 ns ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 14 td(off) RG = 4.7 W (External), 28 ns 8 ns 54 nC 18 nC 25 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.65 RthJC RthCK (TO-247) Source-Drain Diode K/W 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 12 A ISM Repetitive; pulse width limited by TJM 48 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V 250 ns trr QRM IF = IS,-di/dt = 100 A/ms, VR = 100 V IRM 0.8 mC 6.5 A Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 % TO-247 AD Outline 1 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 3 Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ÆP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Dim. Min Recommended Footprint 2 A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025