PolarHVTM HiPerFET Power MOSFET IXFC 36N50P IXFR 36N50P VDSS = 500 ID25 = 19 RDS(on) ≤ 190 ≤ 200 trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25° C 19 A IDM TC = 25° C, pulse width limited by TJM 100 A IAR TC = 25° C 36 A EAR TC = 25° C 50 mJ EAS TC = 25° C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 20 V/ns PD TC = 25° C 156 W D -55 ... +150 150 -55 ... +150 °C °C °C G = Gate S = Source 300 °C 2500 V~ 11..65 / 2.5..15 20..120 / 4.5..25 N/lb N/lb 3 5 g g TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, 1 minute FC Mounting Force Weight (IXFC) (IXFR) (IXFC) (IXFR) Symbol Test Conditions (TJ = 25° C unless otherwise specified) l l 5.0 V l ± 100 nA 25 250 µA µA 190 mΩ VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ± 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT S Isolated back surface S Isolated back surface D = Drain Features l International standard isolated packages l UL recognized packages V 500 D ISOPLUS247TM (IXFR) E153432 l VGS = 0 V, ID = 250 µA © 2006 IXYS All rights reserved G Characteristic Values Min. Typ. Max. BVDSS TJ = 125° C ISOPLUS220TM (IXFC) E153432 G TJ TJM Tstg V A mΩ ns Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages l Easy to mount l Space savings l High power density DS99312E(10/05) IXFC 36N50P IXFR 36N50P Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = T, Note 1 23 35 S 5500 pF 510 pF Crss 40 pF td(on) 29 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 ID25 23 ns td(off) RG = 4 Ω (External) 82 ns tf 23 ns Qg(on) 93 nC 30 nC 31 nC VGS = 10 V, VDS = 0.5 VDSS, ID = IT Qgs Qgd ISOPLUS220TM (IXFC) Outline Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3. 0.75 ° C/W RthJC (ISOPLUS 247) (ISOPLUS 220) RthCS Source-Drain Diode ° C/W ° C/W 0.15 0.21 Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 36 A ISM Repetitive 100 A VSD IF = IS, VGS = 0 V, 1.5 V trr IF = 25A, -di/dt = 100 A/µs 200 ns IRM VR = 100 V; VGS = 0 V QRM 8 A 0.6 µC Ref: IXYS CO 0177 R0 ISOPLUS247 Outline Notes: 1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %; 2. Test current IT = 18A. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFC 36N50P IXFR 36N50P Fig. 2. Exte nde d Output Char acte r is tics Fig. 1. Output Char acte r is tics @ 25 º C @ 25 º C 36 80 V GS = 10V 32 8V 24 6V 20 16 12 5.5V 4 50 6.5V 40 6V 30 20 8 5.5V 10 5V 0 5V 0 0 1 2 3 4 5 6 7 0 2 4 6 8 10 12 14 16 18 20 22 24 V D S - V olts V D S - V olts Fig. 3. Output Char acte ris tics @ 125 ºC Fig. 4. RDS(on ) Nor m alize d to ID = 18A V alue vs . Junction Te m pe ratur e 36 3.1 V GS = 10V 32 R D S ( o n ) - Normalized 24 20 5.5V 16 12 5V 8 4.5V 4 V GS = 10V 2.8 7V 6V 28 I D - Amperes 7V 60 I D - Amperes I D - Amperes 28 V GS = 10V 70 8V 7V 2.5 2.2 1.9 I D = 36A 1.6 I D = 18A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 V D S - V olts ID = 18A V alue vs . Dr ain Cur r e nt 50 75 100 125 150 Fig . 6. Dr ain C u r r e n t vs . Cas e T e m p e r atu r e 20 18 V GS = 10V 3 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to 3.4 0 TJ = 125ºC 2.6 14 I D - Amperes R D S ( o n ) - Normalized 16 2.2 1.8 1.4 10 8 6 4 TJ = 25ºC 1 12 2 0.6 0 0 10 20 30 40 50 I D - A mperes © 2006 IXYS All rights reserved 60 70 80 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFC 36N50P IXFR 36N50P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 55 70 50 45 - Siemens 35 30 20 TJ = 125ºC fs 25 15 25ºC -40ºC g I D - Amperes 40 60 TJ = -40ºC 50 25ºC 125ºC 40 30 20 10 10 5 0 0 4 4.5 5 5.5 6 6.5 0 7 10 20 30 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Sour ce -To-Dr ain V oltage 10 90 9 80 8 I D = 18A 7 I G = 10m A V G S - Volts 70 I S - Amperes 50 60 70 80 90 Fig. 10. Gate Char ge 100 60 50 40 TJ = 125ºC 30 40 I D - A mperes V DS = 250V 6 5 4 3 20 2 TJ = 25ºC 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 V S D - V olts 10 20 30 Q 40 G 50 60 70 80 90 100 - nanoCoulombs Fig . 12. Fo r w ar d -Bias Safe Op e r atin g A r e a Fig. 11. Capacitance 10000 1000 T J = 150ºC T C = 25ºC 1000 I D - Amperes Capacitance - picoFarads C is s C oss 100 R D S(on) Lim it 100 25µs 100µs 10 1m s 10m s f = 1MH z C rs s DC 1 10 0 5 10 15 20 25 V D S - V olts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 VD 100 S - V olts 1000 IXFC 36N50P IXFR 36N50P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.0001 © 2006 IXYS All rights reserved 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXYS REF: F_36N50P (7J) 12-06-05-C.xls