PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 600 V ID25 = 12 A Ω RDS(on) ≤ 360 mΩ ≤ 200 ns trr IXFC 22N60P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGS Continuous ± 30 V VGSM Tranisent ± 40 V ID25 TC = 25° C 12 A IDM TC = 25° C, pulse width limited by TJM 66 A IAR TC = 25° C 22 A EAR TC = 25° C 40 mJ EAS TC = 25° C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 130 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS FC Mounting Force t = 1 minute leads-to-tab 2500 V~ 11..65/2.5..15 Weight N/lb 2 Symbol Test Conditions (TJ = 25° C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 600 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ± 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT , Note 1 © 2006 IXYS All rights reserved g TJ = 125° C V 5.0 V ±100 nA 25 250 µA µA 360 mΩ ISOPLUS220TM (IXFC) E153432 G D S G = Gate S = Source (Isolated back surface*) D = Drain Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Fast intrinsic Rectifier Applications DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Advantages Easy assembly: no screws, or isolation foils required l Space savings l High power density l Low collector capacitance to ground (low EMI) l DS99439E(02/06) IXFC 22N60P Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = IT , Note 1 13 Ciss Coss 20 S 4000 pF 320 pF Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 22 pF td(on) 20 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT 20 ns td(off) RG = 4 Ω (External) 60 ns tf 23 ns Qg(on) 58 nC 23 nC 20 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Qgd ISOPLUS220TM (IXFC) Outline Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3. 0.95 ° C/W RthJC ° C/W 0.21 RthCS Source-Drain Diode Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 12 A ISM Repetitive 66 A VSD IF = IS, VGS = 0 V, 1.5 V trr IF = 25A, -di/dt = 100 A/µs 200 ns QRM VR = 100 V, VGS = 0 V Ref: IXYS CO 0177 R0 1.0 µC Notes: 1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %; 2. Test current IT = 11A. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFC 22N60P Fig. 1. Output Characte r is tics Fig. 2. Exte nde d Output Char acte ris tics @ 25º C @ 25 º C 45 22 V GS = 10V 20 18 9V 8V 35 16 7.5V 30 14 I D - Amperes I D - Amperes V GS = 10V 40 8V 7.5V 12 10 8 7V 6 25 20 7V 15 10 4 6V 2 6.5V 5 0 6V 0 0 1 2 3 4 5 6 7 8 0 9 3 6 9 V D S - V olts Fig. 3. Output Characte r is tics 22 18 21 24 27 30 3.4 V GS = 10V 20 3.1 R D S ( o n ) - Normalized 8V 7V 18 16 I D - Amperes 15 V D S - V olts Fig. 4. RDS(on ) Norm alize d to ID = 11A V alue vs . Junction Te m pe rature @ 125º C 14 6.5V 12 10 8 6V 6 4 5.5V 5V 2 V GS = 10V 2.8 2.5 2.2 I D = 22A 1.9 1.6 I D = 11A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 -25 V D S - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to Fig . 6. Dr ain C u r r e n t vs . C as e T e m p e r atu r e ID = 11A V alue vs . Drain Cur re nt 3 14 2.8 V GS = 10V 2.6 TJ = 125 º C 12 2.4 10 2.2 I D - Amperes R D S ( o n ) - Normalized 12 2 1.8 1.6 8 6 4 1.4 1.2 TJ = 25 º C 1 2 0.8 0 0 5 10 15 20 25 I D - A mperes © 2006 IXYS All rights reserved 30 35 40 45 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFC 22N60P Fig. 8. Trans conductance 30 27 27 24 24 21 21 - Siemens 30 15 12 TJ = 125 º C 9 25 º C 6 TJ = -40 º C 25 º C 125 º C 18 15 fs 18 12 g I D - Amperes Fig. 7. Input Adm ittance 9 6 -40 º C 3 3 0 0 4.5 5 5.5 6 6.5 7 7.5 8 0 3 6 9 12 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Sour ce -To-Drain V oltage 21 24 27 30 10 60 V G S - Volts 50 I S - Amperes 18 Fig. 10. Gate Charge 70 40 30 TJ = 125 º C 9 V DS = 300V 8 I D = 11A 7 I G = 10m A 6 5 4 3 20 TJ = 25 º C 10 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 V S D - V olts 10 20 Q G 30 40 50 60 - nanoCoulombs Fig . 12. Fo r w ar d -Bias Safe Op e r atin g Ar e a Fig. 11. Capacitance 10000 100 f = 1MH z R D S(on) Lim it 25µs C is s 1000 I D - Amperes Capacitance - picoFarads 15 I D - A mperes C os s 100 100µs 10 1m s 10m s 1 DC TJ = 150ºC C rss TC = 25ºC 10 0.1 0 5 10 15 20 25 V D S - V olts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 VD S - V olts 1000 IXFC 22N60P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2006 IXYS All rights reserved IXYS REF: T_22N60P (6J) 02-17-06-B