IXYS IXFC22N60P

PolarHVTM HiPerFET
Power MOSFET
ISOPLUS220TM
VDSS = 600
V
ID25 = 12
A
Ω
RDS(on) ≤ 360 mΩ
≤ 200 ns
trr
IXFC 22N60P
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25° C to 150° C
600
V
VDGR
TJ = 25° C to 150° C; RGS = 1 MΩ
600
V
VGS
Continuous
± 30
V
VGSM
Tranisent
± 40
V
ID25
TC = 25° C
12
A
IDM
TC = 25° C, pulse width limited by TJM
66
A
IAR
TC = 25° C
22
A
EAR
TC = 25° C
40
mJ
EAS
TC = 25° C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤150° C, RG = 4 Ω
10
V/ns
PD
TC = 25° C
130
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
VISOL
50/60 Hz, RMS
FC
Mounting Force
t = 1 minute leads-to-tab
2500
V~
11..65/2.5..15
Weight
N/lb
2
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
600
VGS(th)
VDS = VGS, ID = 4 mA
3.0
IGSS
VGS = ± 30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT , Note 1
© 2006 IXYS All rights reserved
g
TJ = 125° C
V
5.0
V
±100
nA
25
250
µA
µA
360
mΩ
ISOPLUS220TM (IXFC)
E153432
G
D
S
G = Gate
S = Source
(Isolated back surface*)
D = Drain
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<35pF)
l
Low RDS (on) HDMOSTM process
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Fast intrinsic Rectifier
Applications
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
l
Advantages
Easy assembly: no screws, or isolation
foils required
l
Space savings
l
High power density
l
Low collector capacitance to ground
(low EMI)
l
DS99439E(02/06)
IXFC 22N60P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 20 V; ID = IT , Note 1
13
Ciss
Coss
20
S
4000
pF
320
pF
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
22
pF
td(on)
20
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
20
ns
td(off)
RG = 4 Ω (External)
60
ns
tf
23
ns
Qg(on)
58
nC
23
nC
20
nC
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
ISOPLUS220TM (IXFC) Outline
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
0.95 ° C/W
RthJC
° C/W
0.21
RthCS
Source-Drain Diode
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
12
A
ISM
Repetitive
66
A
VSD
IF = IS, VGS = 0 V,
1.5
V
trr
IF = 25A, -di/dt = 100 A/µs
200
ns
QRM
VR = 100 V, VGS = 0 V
Ref: IXYS CO 0177 R0
1.0
µC
Notes:
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %;
2. Test current IT = 11A.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFC 22N60P
Fig. 1. Output Characte r is tics
Fig. 2. Exte nde d Output Char acte ris tics
@ 25º C
@ 25 º C
45
22
V GS = 10V
20
18
9V
8V
35
16
7.5V
30
14
I D - Amperes
I D - Amperes
V GS = 10V
40
8V
7.5V
12
10
8
7V
6
25
20
7V
15
10
4
6V
2
6.5V
5
0
6V
0
0
1
2
3
4
5
6
7
8
0
9
3
6
9
V D S - V olts
Fig. 3. Output Characte r is tics
22
18
21
24
27
30
3.4
V GS = 10V
20
3.1
R D S ( o n ) - Normalized
8V
7V
18
16
I D - Amperes
15
V D S - V olts
Fig. 4. RDS(on ) Norm alize d to ID = 11A
V alue vs . Junction Te m pe rature
@ 125º C
14
6.5V
12
10
8
6V
6
4
5.5V
5V
2
V GS = 10V
2.8
2.5
2.2
I D = 22A
1.9
1.6
I D = 11A
1.3
1
0.7
0
0.4
0
2
4
6
8
10
12
14
16
18
20
-50
-25
V D S - V olts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Nor m alize d to
Fig . 6. Dr ain C u r r e n t vs . C as e
T e m p e r atu r e
ID = 11A V alue vs . Drain Cur re nt
3
14
2.8
V GS = 10V
2.6
TJ = 125 º C
12
2.4
10
2.2
I D - Amperes
R D S ( o n ) - Normalized
12
2
1.8
1.6
8
6
4
1.4
1.2
TJ = 25 º C
1
2
0.8
0
0
5
10
15
20
25
I D - A mperes
© 2006 IXYS All rights reserved
30
35
40
45
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFC 22N60P
Fig. 8. Trans conductance
30
27
27
24
24
21
21
- Siemens
30
15
12
TJ = 125 º C
9
25 º C
6
TJ = -40 º C
25 º C
125 º C
18
15
fs
18
12
g
I D - Amperes
Fig. 7. Input Adm ittance
9
6
-40 º C
3
3
0
0
4.5
5
5.5
6
6.5
7
7.5
8
0
3
6
9
12
V G S - V olts
Fig. 9. Sour ce Cur re nt vs .
Sour ce -To-Drain V oltage
21
24
27
30
10
60
V G S - Volts
50
I S - Amperes
18
Fig. 10. Gate Charge
70
40
30
TJ = 125 º C
9
V DS = 300V
8
I D = 11A
7
I G = 10m A
6
5
4
3
20
TJ = 25 º C
10
2
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
V S D - V olts
10
20
Q
G
30
40
50
60
- nanoCoulombs
Fig . 12. Fo r w ar d -Bias
Safe Op e r atin g Ar e a
Fig. 11. Capacitance
10000
100
f = 1MH z
R D S(on) Lim it
25µs
C is s
1000
I D - Amperes
Capacitance - picoFarads
15
I D - A mperes
C os s
100
100µs
10
1m s
10m s
1
DC
TJ = 150ºC
C rss
TC = 25ºC
10
0.1
0
5
10
15
20
25
V D S - V olts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
VD
S
- V olts
1000
IXFC 22N60P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
R ( t h ) J C - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_22N60P (6J) 02-17-06-B