IXYS IXFN180N15P

PolarHTTM HiPerFET IXFN 180N15P
Power MOSFET
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
150
150
V
V
VDSS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25° C
150
A
ID(RMS)
External lead current limit
100
A
IDM
TC = 25° C, pulse width limited by TJM
380
A
IAR
TC = 25° C
60
A
Maximum Ratings
EAR
TC = 25° C
100
mJ
EAS
TC = 25° C
4
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
10
V/ns
PD
TC = 25° C
680
W
TJ
TJM
Tstg
Md
VISOL
TL
-55 ... +175
°C
175
°C
-55 ... +150
°C
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
V~
3000
V~
Mounting torque
Terminal connection torque (M4)
50/60 Hz
t = 1 min
IISOL ≤1 mA
t=1s
1.6 mm (0.062 in.) from case for 10 s
Weight
30
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
VDSS
°C
300
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS, VGS = 0 V
RDS(on)
VGS = 10 V, ID = 90 A
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
g
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
l
l
l
isolation
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
150
l
V
5.0
V
±100
nA
25
500
µA
µA
11
mΩ
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Characteristic Values
Min. Typ.
Max.
2.5
TJ = 150° C
= 150 V
= 150 A
≤ 11 mΩ
Ω
≤ 200 ns
l
l
Easy to mount
Space savings
High power density
DS99241E(01/06)
IXFN 180N15P
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 90 A, pulse test
55
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
86
S
7000
pF
2250
pF
515
pF
td(on)
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 90 A
td(off)
RG = 3.3 Ω (External)
30
ns
32
ns
150
ns
36
ns
240
nC
55
nC
140
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 90 A
Qgd
SOT-227B Outline
0.22° CW
RthJC
RthCS
° C/W
0.05
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
180
A
ISM
Repetitive
380
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
QRM
IRM
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
0.6
6
200 ns
µC
Α
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFN 180N15P
Fig. 1. Output Characte r is tics
@ 25ºC
Fig. 2. Exte nde d Output Characte r is tics
@ 25ºC
320
180
V GS = 10V
160
140
9V
240
120
8V
I D - Amperes
I D - Amperes
V GS = 10V
280
9V
100
80
7V
60
200
8V
160
120
7V
80
40
6
20
40
0
0
0.4
0.8
1.2
1.6
6V
0
2
0
V D S - V olts
Fig. 3. Output Characte r is tics
@ 150ºC
180
3
4
5
6
7
V D S - V olts
8
9
10
2.8
2.6
V GS = 10V
2.4
R D S ( o n ) - Normalized
140
I D - Amperes
2
Fig. 4. RDS(on ) Norm alize d to ID = 90A
V alue vs . Junction Te m pe r atur e
V GS = 10V
9V
160
1
8
120
100
80
7V
60
6V
40
20
2.2
2
I D = 180A
1.8
1.6
I D = 90A
1.4
1.2
1
0.8
5V
0
0.6
0
0.5
1
1.5
2
2.5
3
3.5
4
V D S - V olts
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alize d to ID = 90A
V alue vs . Dr ain Cur re nt
Fig. 6. Drain Current vs. Case
Tem perature
3.4
120
External Lead Current Limit
TJ = 175 ºC
2.8
100
2.5
I D - Amperes
R D S ( o n ) - Normalized
3.1
2.2
V GS = 10V
1.9
V GS = 15V
1.6
80
60
40
TJ = 25 ºC
1.3
20
1
0.7
0
0
50
100
150
200
I D - A mperes
© 2006 IXYS All rights reserved
250
300
350
-50
-25
0
25
50
75
100
125 150 175
TC - Degrees Centigrade
IXFN 180N15P
Fig. 8. Trans conductance
Fig. 7. Input Adm ittance
120
250
TJ = -40 ºC
225
100
200
- Siemens
150
125
fs
100
TJ = 150 ºC
75
g
I D - Amperes
175
25 ºC
50
80
60
40
20
-40 ºC
25
25 ºC
150 ºC
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
0
25
50
75
V G S - V olts
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
Fig. 10. Gate Char ge
10
350
9
300
I D = 90A
I G = 10m A
7
V G S - Volts
I S - Amperes
V DS = 75V
8
250
200
150
TJ = 150 ºC
100
6
5
4
3
2
TJ = 25 ºC
50
1
0
0
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
V S D - V olts
25
50
75
100 125 150 175 200 225 250
Q G - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forw ard-Bias
Safe Operating Area
100,000
1000
f = 1M Hz
R DS(on) Limit
Cis
10,000
I D - Amperes
Capacitance - picoFarads
100 125 150 175 200 225 250
I D - A mperes
Cos
1,000
25µs
100µs
100
1ms
Crs
10ms
TJ = 175ºC
TC = 25ºC
100
DC
10
0
5
10
15
20
25
V DS - V olts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
100
V D S - Volts
1000
IXFN 180N15P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
R( t h ) J C - ºC / W
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_180N15P (88) 03-23-06-C.xls