PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 110N10P VDSS = 100 V ID25 = 60 A RDS(on) ≤ 17 m Ω ≤ 150 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 100 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25° C 60 A IDM TC = 25° C, pulse width limited by TJM 250 A IAR TC = 25° C 60 A EAR TC = 25° C 40 mJ EAS TC = 25° C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 120 W -55 ... +175 175 -55 ... +150 °C °C °C 300 260 2500 °C °C V~ 11..65 / 2.5..15 N/lb TJ TJM Tstg TL TSOLD VISOL 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab FC Mounting Force ISOPLUS220TM (IXFC) E153432 G D S G = Gate S = Source Isolated back surface D = Drain Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Fast intrinsic Rectifier Applications DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Weight 2 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 55 A © 2006 IXYS All rights reserved g TJ = 150° C V 5.0 V ±100 nA 25 250 µA µA 17 mΩ Advantages Easy assembly: no screws, or isolation foils required l Space savings l High power density l Low collector capacitance to ground (low EMI) l DS99370E(03/06) IXFC 110N10P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID =55 A, Note 1 30 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 43 S 3550 pF 1370 pF 440 pF Crss td(on) 21 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 25 ns td(off) RG = 4 Ω (External) 65 ns 25 ns 110 nC 25 nC 62 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 55 A Qgd ISOPLUS220TM (IXFC) Outline Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3. 1.25° C/W RthJC RthCS ° C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 110 A ISM Repetitive 250 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 50 V, VGS = 0 V 0.6 Ref: IXYS CO 0177 R0 150 ns µC Note: Pulse test, t ≤300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFC 110N10P Fig. 1. Output Characte r is tics @ 25ºC Fig. 2. Exte nde d Output Characte r is tics @ 25ºC 220 110 V GS = 10V 9V 100 90 180 9V 160 70 I D - Amperes 80 I D - Amperes V GS = 10V 200 8V 60 50 40 7V 140 120 8V 100 80 7V 60 30 20 40 6V 10 0 0 0.2 0.4 0.6 0.8 1 1.2 6V 20 5V 0 1.4 1.6 1.8 0 2 1 2 3 Fig. 3. Output Characte r is tics @ 150ºC 6 7 8 9 10 2.4 V GS = 10V 9V 100 V GS = 10V 2.2 R D S ( o n ) - Normalized 90 80 I D - Amperes 5 Fig. 4. RDS(on ) Norm alize d to ID = 55A V alue vs . Junction Te m pe r atur e 110 8V 70 60 7V 50 40 30 6V 20 2 1.8 I D = 110A 1.6 1.4 I D = 55A 1.2 1 0.8 5V 10 0 0.6 0 0.5 1 1.5 2 2.5 3 V D S - V olts 3.5 -50 4 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to ID = 55A V alue vs . Drain Curr e nt Fig . 6. Dr ain C u r r e n t vs . C as e T e m p e r atu r e 60 3 2.8 V GS = 10V 2.6 V GS = 15V - - - - 50 2.4 TJ = 175 ºC 2.2 2 1.8 1.6 1.4 1.2 TJ = 25 ºC 1 I D - Amperes R D S ( o n ) - Normalized 4 V D S - V olts V D S - V olts 40 30 20 10 0.8 0 0.6 0 25 50 75 100 125 150 175 200 225 250 I D - A mperes © 2006 IXYS All rights reserved -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXFC 110N10P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 70 250 225 TJ = -40 ºC 200 25 ºC 150 ºC 50 - Siemens 175 150 100 fs 125 75 g I D - Amperes 60 TJ = -40 ºC 40 25 ºC 150 ºC 30 20 50 10 25 0 0 4 5 6 7 8 9 10 0 11 50 100 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 200 250 300 100 120 Fig. 10. Gate Char ge 10 350 V DS = 50V 9 300 I D = 55A 8 250 I G = 10m A 7 V G S - Volts I S - Amperes 150 I D - A mperes 200 150 6 5 4 3 100 TJ = 150 ºC 2 50 TJ = 25 ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 V S D - V olts 1.6 1.8 2 0 20 40 Q G 60 80 - nanoCoulombs Fig . 12. Fo r w ar d -Bias Safe Op e r atin g A r e a Fig. 11. Capacitance 10000 1000 25µs C is s I D - Amperes Capacitance - picoFarads R DS (on) Lim it 1000 C os s 100 100µs 1m s 10 10m s TJ = 175 ºC C rss f = 1MH z DC TC = 25 ºC 100 1 0 5 10 15 20 25 30 35 40 V DS - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 VD S - V olts 1000 IXFC 110N10P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R( t h ) J C - ºC / W 10.00 1.00 0.10 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds © 2006 IXYS All rights reserved IXYS REF: T_110N10P (6S) 6-15-05-A.xls