IXYS IXFR38N80Q2

HiPerFETTM
MOSFET
Q2-Class
VDSS
ID25
RDS(on)
(Electrically Isolated Back Surface)
trr ≤ 250 ns
IXFR 38N80Q2
=
=
=
800 V
28 A
Ω
240 mΩ
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
800
800
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
28
150
38
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
75
4.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
20
V/ns
PD
TC = 25°C
416
W
TL
1.6 mm (0.063 in) from case for 10 s
VISOL
50/60 Hz, RMS, t = 1 min
ISOL = 1mA, t = 1 s
FC
Mounting Force
G
G = Gate
S = Source
°C
°C
°C
300
°C
2500
3000
V~
V~
z
z
z
z
z
Weight
5
g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3mA
800
VGS(th)
VDS = VGS, ID = 8 mA
2.0
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
TJ = 25°C
TJ = 125°C
D = Drain
Double metal process for low gate
resistance
Silicon chip on DCB substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
z
Symbol
Isolated Back
Surface
D
Features
-55 ... +150
150
-55 ... +150
TJ
TJM
Tstg
ISOPLUS247 (IXFR)
z
z
Easy assembly
Space savings
High power density
V
4.5
V
±200
nA
50
2
µA
mA
240 mΩ
DS99203(09/04)
IXFR 38N80Q2
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = IT, pulse test
25
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
37
S
8340
pF
890
pF
175
pF
td(on)
20
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
16
ns
td(off)
RG = 1.0 Ω (External),
60
ns
12
ns
190
nC
44
nC
88
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Qgd
RthJC
0.3
RthCK
0.15
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
38
A
Repetitive; pulse width limited by TJM
150
A
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
250
ns
t rr
QRM
IRM
ISOPLUS247 Outline
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
1
10
µC
A
Notes: 1. Test current IT = 19A
2. See IXFK38N80Q2 data sheet for
characteristic curves
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXFR 38N80Q2
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
40
90
VGS = 10V
7V
35
8V
7V
70
30
6V
25
20
I D - Amperes
I D - Amperes
VGS = 10V
80
5.5V
15
10
60
6V
50
40
30
5.5V
20
5V
5
5V
10
0
0
0
1
2
3
4
5
6
7
8
9
10
0
3
6
9
V D S - Volts
Fig. 3. Output Characteristics
@ 125ºC
18
21
24
27
30
3.1
VGS = 10V
7V
6V
VGS = 10V
2.8
R D S ( o n ) - Normalized
35
30
I D - Amperes
15
V D S - Volts
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
40
5.5V
25
20
5V
15
10
5
2.5
2.2
1.9
I D = 38A
1.6
I D = 19A
1.3
1
0.7
0.4
0
0
2
4
6
8
10
12
V D S - Volts
14
16
18
-50
20
0
25
50
75
100
125
150
Fig. 6. Drain Current vs. Case
Tem perature
0.5 ID25 Value vs. ID
30
2.8
2.6
-25
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
27
VGS = 10V
TJ = 125ºC
2.4
24
2.2
21
I D - Amperes
R D S ( o n ) - Normalized
12
2
1.8
1.6
1.4
18
15
12
9
TJ = 25ºC
1.2
6
1
3
0.8
0
0
10
20
30
40
50
I D - Amperes
© 2004 IXYS All rights reserved
60
70
80
90
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFR 38N80Q2
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
50
70
45
60
TJ = -40ºC
25ºC
125ºC
50
35
g f s - Siemens
I D - Amperes
40
30
25
20
TJ = 125ºC
25ºC
-40ºC
15
10
40
30
20
10
5
0
0
3.5
4
4.5
5
5.5
6
0
10
20
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
50
60
10
100
80
VG S - Volts
I S - Amperes
40
Fig. 10. Gate Charge
120
60
TJ = 125ºC
40
9
VDS = 400V
8
I D = 19A
7
I G = 10mA
6
5
4
3
TJ = 25ºC
2
20
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
V S D - Volts
1
1.1
1.2
0
1.3
20
40
60
80
100 120 140 160 180 200
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
TJ = 150ºC
C iss
TC = 25ºC
100µs
I D - Amperes
Capacitance - picoFarads
30
I D - Amperes
C oss
1000
25µs
1ms
100
10ms
10
R DS(on) Limit
C rss
DC
f = 1MHz
100
1
0
5
10
15
20
25
30
35
40
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - Volts
1000
IXFR 38N80Q2
Fig. 13. Maxim um Transient Thermal Resistance
R( t h ) J C - ºC / W
1.00
0.10
0.01
1
10
100
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
1000