IXYS IXFR80N50P

PolarHVTM HiPerFET
Power MOSFET
ISOPLUS247TM
IXFR 80N50P
VDSS
ID25
RDS(on)
trr
(Electrically Isolated Back Surface)
= 500 V
= 45 A
≤ 72 mΩ
Ω
≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
VDSS
VDGR
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
500
500
V
V
VGSM
VGSM
Transient
Continuous
± 40
± 30
V
V
ID25
IDM
TC = 25° C
TC = 25° C, pulse width limited by TJM
45
200
A
A
IAR
EAR
EAS
TC = 25° C
TC = 25° C
TC = 25° C
80
80
3.5
A
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 2 Ω
20
V/ns
PD
Maximum Ratings
TC = 25° C
360
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
20..120/4.5..25
N/lb
TJ
TJM
Tstg
TL
Maximum lead temperature for soldering
FC
Mounting force
VISOL
50/60 Hz, RMS, 1 minute
Weight
2500
V~
5
g
ISOPLUS247 (IXFR)
E153432
G
D
S
(Isolated Tab)
G = Gate
S = Source
D = Drain
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<30pF)
l
Low RDS (on) HDMOSTM process
l
Rugged polysilicon gate cell structure
l
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic Rectifier
l
Applications
l
DC-DC converters
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 500 µA
500
VGS(th)
VDS = VGS, ID = 8 mA
3.0
IGSS
VGS = ± 30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 40 A
© 2006 IXYS All rights reserved
TJ = 125° C
V
5.0
V
± 200
nA
25
2
µA
mA
72
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
DC choppers
l
l
AC motor control
Advantages
l
Easy assembly
l
Space savings
l
High power density
mΩ
DS99438E(03/06)
IXFR 80N50P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 20 V; ID = 40 A, ID25, Note 1
45
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss
70
S
12.7
nF
1280
pF
120
pF
Crss
td(on)
25
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 40 A
27
ns
td(off)
RG = 1 Ω (External)
70
ns
16
ns
197
nC
70
nC
64
nC
tf
Qg(on)
VGS= 10 V, VDS = 0.5 VDSS, ID = 40 A
Qgs
Qgd
RthJC
ISOPLUS247TM Outline
0.35° C/W
RthCS
° C/W
0.15
Source-Drain Diode
Characteristic Values
(TJ = 25° C unless otherwise specified
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
80
A
ISM
Repetitive
200
A
VSD
IF = IS, VGS = 0 V,
1.5
V
trr
IF = 25 A, -di/dt = 100 A/µs
200
ns
QRM
VR = 100 V, VGS = 0 V
0.6
µC
6
A
IRM
Notes:
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFR 80N50P
Fig. 1. Output Char acte r is tics
Fig. 2. Exte nde d Output Characte r is tics
@ 25 ° C
V GS = 10V
70
V GS = 10V
160
8V
60
8V
140
7V
120
50
I D - Amperes
I D - Amperes
@ 25° C
180
80
40
30
6V
20
7V
100
80
60
6V
40
10
20
5V
5V
0
0
0
1
2
3
4
5
6
0
3
6
9
V D S - V olts
Fig. 3. Output Char acte ris tics
80
18
21
24
27
3.4
V GS = 10V
70
3.1
R D S ( o n ) - Normalized
7V
60
I D - Amperes
15
Fig. 4. RDS(on ) Nor m alize d to ID = 40 A
V alue vs . Junction Te m pe ratur e
@ 125 ° C
6V
50
40
30
20
5V
10
V GS = 10V
2.8
2.5
2.2
I D = 80A
1.9
1.6
I D = 40A
1.3
1
0.7
0
0.4
0
2
4
6
8
10
12
14
-50
-25
V D S - V olts
25
50
75
100
125
150
Fig. 6. Dr ain Cur r e nt vs . Cas e
Te m pe r atur e
ID = 40 A V alue vs . ID
3.2
0
TJ - Degrees Centigrade
Fig. 5. RDS(on) Nor m alize d to
45
3
V GS = 10V
40
TJ = 125 ° C
2.8
35
2.6
2.4
I D - Amperes
R D S ( o n ) - Normalized
12
V D S - V olts
2.2
2
1.8
1.6
1.4
30
25
20
15
10
1.2
TJ = 25 ° C
1
5
0.8
0
0
20
40
60
80
100
120
I D - A mperes
© 2006 IXYS All rights reserved
140
160
180
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFR 80N50P
Fig. 8. Tr ans conductance
140
120
120
100
100
80
- Siemens
140
TJ = 125 ° C
-40 ° C
40
25 ° C
125 ° C
60
fs
25 ° C
60
TJ = -40 ° C
80
g
I D - Amperes
Fig. 7. Input Adm ittance
40
20
20
0
0
4
4.5
5
5.5
6
6.5
7
0
7.5
20
40
V G S - V olts
Fig. 9. Source Cur r e nt vs .
Sour ce -To-Dr ain V oltage
80
120
140
10
V G S - Volts
200
150
100
9
V DS = 250V
8
I D = 40A
7
I G = 10m A
6
5
4
3
TJ = 125 ° C
50
2
TJ = 25 ° C
1
0
0
0.4
0.6
0.8
1
1.2
1.4
1.6
0
V S D - V olts
20
40
60
80
Q
- NanoCoulombs
G
100 120 140 160 180 200
Fig. 12. For w ar d-Bias
Safe Ope r ating Ar e a
Fig. 11. Capacitance
1000
100000
TJ = 150 ° C
f = 1MH z
TC = 25 ° C
R D S(on) Lim it
10000
C iss
I D - Amperes
Capacitance - PicoFarads
100
Fig. 10. Gate Char ge
250
I S - Amperes
60
I D - A mperes
1000
C os s
100
25µs
100µs
1m s
10
100
10m s
C rs s
DC
1
10
0
5
10
15
20
25
30
35
40
V D S - V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - V olts
1000
IXFR 80N50P
Fig. 13. Maxim um Transient Therm al Resistance
R ( t h ) J C - ºC / W
1.00
0.10
0.01
0.00
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
© 2006 IXYS All rights reserved
1
10