PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = 500 V = 45 A ≤ 72 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGSM VGSM Transient Continuous ± 40 ± 30 V V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 45 200 A A IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C 80 80 3.5 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω 20 V/ns PD Maximum Ratings TC = 25° C 360 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 20..120/4.5..25 N/lb TJ TJM Tstg TL Maximum lead temperature for soldering FC Mounting force VISOL 50/60 Hz, RMS, 1 minute Weight 2500 V~ 5 g ISOPLUS247 (IXFR) E153432 G D S (Isolated Tab) G = Gate S = Source D = Drain Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier l Applications l DC-DC converters Symbol Test Conditions (TJ = 25° C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 500 µA 500 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ± 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 40 A © 2006 IXYS All rights reserved TJ = 125° C V 5.0 V ± 200 nA 25 2 µA mA 72 l Battery chargers l Switched-mode and resonant-mode power supplies DC choppers l l AC motor control Advantages l Easy assembly l Space savings l High power density mΩ DS99438E(03/06) IXFR 80N50P Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 40 A, ID25, Note 1 45 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss 70 S 12.7 nF 1280 pF 120 pF Crss td(on) 25 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 40 A 27 ns td(off) RG = 1 Ω (External) 70 ns 16 ns 197 nC 70 nC 64 nC tf Qg(on) VGS= 10 V, VDS = 0.5 VDSS, ID = 40 A Qgs Qgd RthJC ISOPLUS247TM Outline 0.35° C/W RthCS ° C/W 0.15 Source-Drain Diode Characteristic Values (TJ = 25° C unless otherwise specified Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 80 A ISM Repetitive 200 A VSD IF = IS, VGS = 0 V, 1.5 V trr IF = 25 A, -di/dt = 100 A/µs 200 ns QRM VR = 100 V, VGS = 0 V 0.6 µC 6 A IRM Notes: 1. Pulse test, t ≤300 µs, duty cycle d≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFR 80N50P Fig. 1. Output Char acte r is tics Fig. 2. Exte nde d Output Characte r is tics @ 25 ° C V GS = 10V 70 V GS = 10V 160 8V 60 8V 140 7V 120 50 I D - Amperes I D - Amperes @ 25° C 180 80 40 30 6V 20 7V 100 80 60 6V 40 10 20 5V 5V 0 0 0 1 2 3 4 5 6 0 3 6 9 V D S - V olts Fig. 3. Output Char acte ris tics 80 18 21 24 27 3.4 V GS = 10V 70 3.1 R D S ( o n ) - Normalized 7V 60 I D - Amperes 15 Fig. 4. RDS(on ) Nor m alize d to ID = 40 A V alue vs . Junction Te m pe ratur e @ 125 ° C 6V 50 40 30 20 5V 10 V GS = 10V 2.8 2.5 2.2 I D = 80A 1.9 1.6 I D = 40A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 14 -50 -25 V D S - V olts 25 50 75 100 125 150 Fig. 6. Dr ain Cur r e nt vs . Cas e Te m pe r atur e ID = 40 A V alue vs . ID 3.2 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to 45 3 V GS = 10V 40 TJ = 125 ° C 2.8 35 2.6 2.4 I D - Amperes R D S ( o n ) - Normalized 12 V D S - V olts 2.2 2 1.8 1.6 1.4 30 25 20 15 10 1.2 TJ = 25 ° C 1 5 0.8 0 0 20 40 60 80 100 120 I D - A mperes © 2006 IXYS All rights reserved 140 160 180 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFR 80N50P Fig. 8. Tr ans conductance 140 120 120 100 100 80 - Siemens 140 TJ = 125 ° C -40 ° C 40 25 ° C 125 ° C 60 fs 25 ° C 60 TJ = -40 ° C 80 g I D - Amperes Fig. 7. Input Adm ittance 40 20 20 0 0 4 4.5 5 5.5 6 6.5 7 0 7.5 20 40 V G S - V olts Fig. 9. Source Cur r e nt vs . Sour ce -To-Dr ain V oltage 80 120 140 10 V G S - Volts 200 150 100 9 V DS = 250V 8 I D = 40A 7 I G = 10m A 6 5 4 3 TJ = 125 ° C 50 2 TJ = 25 ° C 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 V S D - V olts 20 40 60 80 Q - NanoCoulombs G 100 120 140 160 180 200 Fig. 12. For w ar d-Bias Safe Ope r ating Ar e a Fig. 11. Capacitance 1000 100000 TJ = 150 ° C f = 1MH z TC = 25 ° C R D S(on) Lim it 10000 C iss I D - Amperes Capacitance - PicoFarads 100 Fig. 10. Gate Char ge 250 I S - Amperes 60 I D - A mperes 1000 C os s 100 25µs 100µs 1m s 10 100 10m s C rs s DC 1 10 0 5 10 15 20 25 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - V olts 1000 IXFR 80N50P Fig. 13. Maxim um Transient Therm al Resistance R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.00 0.0001 0.001 0.01 0.1 Pulse Width - Seconds © 2006 IXYS All rights reserved 1 10