IXYS IXFR48N60P

PolarHVTM HiPerFET
Power MOSFET
IXFR 48N60P
VDSS
ID25
RDS(on)
trr
ISOPLUS247TM
(Electrically Isolated Back Surface)
= 600 V
= 32 A
≤ 150 mΩ
Ω
≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25° C to 150° C
600
V
VDGR
TJ = 25° C to 150° C; RGS = 1 MΩ
600
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25° C
32
A
IDM
TC = 25° C, pulse width limited by TJM
110
A
IAR
TC = 25° C
32
A
EAR
TC = 25° C
70
mJ
EAS
TC = 25° C
2.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
20
V/ns
PD
TC = 25° C
300
W
-55 ... +150
150
-55 ... +150
300
°C
°C
°C
°C
2500
V~
20..120 / 4.5..26
N/lb.
5
g
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
VISOL
50/60 Hz, RMS, 1 minute
FC
Mounting Force
Weight
ISOPLUS247 (IXFR)
E153432
G
BVDSS
VGS = 0 V, ID = 250 µA
600
VGS(th)
VDS = VGS, ID = 8 mA
3.0
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
© 2006 IXYS All rights reserved
V
5.0
V
±200
nA
l
l
l
l
25
1000
µA
µA
150
mΩ
D = Drain
International standard isolated
package
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Advantages
l
l
l
TJ = 125° C
ISOLATED TAB
Features
l
Characteristic Values
Min. Typ.
Max.
S
G = Gate
S = Source
l
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
D
Easy to mount
Space savings
High power density
DS99184E(12/05)
IXFR48N60P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 20 V; ID = IT, Notes 1, 2
35
53
S
8860
pF
850
pF
Crss
60
pF
td(on)
30
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VDS = 0.5 VDSS, ID = IT, VGS = 10 V
25
ns
td(off)
RG = 2 Ω (External)
85
ns
22
ns
150
nC
50
nC
50
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
RthJC
0.42
Source-Drain Diode
°C/W
°C/W
0.15
RthCS
ISOPLUS247 Outline
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
32
A
ISM
Repetitive
110
A
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
trr
IF = 20A, -di/dt = 100 A/µs
200
ns
QRM
VR = 480V
IRM
0.8
µC
6.0
A
Notes:
1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;
2. Test current IT = 24 A.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFR 48N60P
Fig. 1. Output Characte r is tics
Fig. 2. Exte nde d Output Characte r is tics
@ 25º C
@ 25º C
50
V GS = 10V
45
40
V GS = 10V
120
8V
7V
8V
100
I D - Amperes
I D - Amperes
35
30
25
6V
20
15
7V
80
60
40
6V
10
20
5
5V
5V
0
0
0
1
2
3
4
5
0
6
4
8
Fig. 3. Output Characte r is tics
@ 125ºC
20
24
3.1
V GS = 10V
45
R D S ( o n ) - Normalized
35
6V
30
25
20
15
10
V GS = 10V
2.8
7V
40
I D - Amperes
16
Fig. 4. RDS(on ) Norm alize d to ID = 24A
V alue vs . Junction Te m pe r atur e
50
5V
2.5
2.2
I D = 48A
1.9
1.6
I D = 24A
1.3
1
0.7
5
0.4
0
0
2
4
6
8
V D S - V olts
10
12
-50
14
50
75
100
125
150
30
TJ = 125ºC
2.8
25
35
V GS = 10V
3.1
0
Fig . 6. Dr ain C u r r e n t vs . C as e
T e m p e r atu r e
ID = 24A V alue vs . Dr ain Cur re nt
3.4
-25
TJ - Degrees Centigrade
Fig. 5. RDS(on) Nor m alize d to
25
2.5
I D - Amperes
R D S ( o n ) - Normalized
12
V D S - V olts
V D S - V olts
2.2
1.9
1.6
20
15
10
1.3
TJ = 25ºC
5
1
0
0.7
0
20
40
60
80
I D - A mperes
© 2006 IXYS All rights reserved
100
120
140
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFR48N60P
Fig. 8. Trans conductance
Fig. 7. Input Adm ittance
100
80
90
70
80
- Siemens
TJ = 125ºC
25ºC
-40ºC
40
70
60
50
fs
50
40
g
I D - Amperes
60
30
30
20
TJ = -40ºC
25ºC
125ºC
20
10
10
0
0
4
4.5
5
5.5
6
6.5
7
0
10
20
30
V G S - V olts
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
50
60
70
80
90
140
160
Fig. 10. Gate Char ge
10
160
140
120
100
V G S - Volts
I S - Amperes
40
I D - A mperes
80
60
V DS = 300V
8
I D = 24A
7
I G = 10m A
6
5
4
3
TJ = 125ºC
40
9
2
TJ = 25ºC
20
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
V S D - V olts
1.1
1.2
0
1.3
20
40
60
Q
G
80
100
120
- nanoCoulombs
Fig . 13 . M a x im u m T r a n s ie n t T h e r m al
Re s is t a n ce
Fig. 11. Capacitance
100000
1.00
C is s
10000
R ( t h ) J C - ºC / W
Capacitance - picoFarads
f = 1MH z
C os s
1000
100
0.10
0.01
C rs s
10
0.00
0
5
10
15
20
25
30
35
40
V D S - V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.0001
0.001
0.01
0.1
Pu ls e W id th - Se c o n ds
1
10