PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 32N80P VDSS = ID25 = RDS(on) ≤ ≤ trr (Electrically Isolated Back Surface) 800 V 20 A 290 m Ω 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 800 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25° C 20 A IDM TC = 25° C, pulse width limited by TJM 70 A IAR TC = 25° C 16 A EAR TC = 25° C 50 mJ EAS TC = 25° C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 300 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s FC Mounting force VISOL 50/60 Hz, RMS 20..120/4.5..26 N/lb 2500 V~ 5 g t = 1 minute Weight Symbol Test Conditions (TJ = 25° C, unless otherwise specified) °C 300 Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 800 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ±30 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V 25 1000 µA µA RDS(on) VGS = 10 V, ID = IT Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 290 mΩ © 2006 IXYS All rights reserved TJ = 125° C V 5.0 V ISOPLUS247 (IXFR) E153432 (Isolated Tab) G = Gate S = Source D = Drain Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) l l l l Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications DC-DC converters l l Battery chargers l Switched-mode and resonant-mode power supplies DC choppers l l AC motor control Advantages Easy assembly l l Space savings l High power density DS99419E(01/06) IXFR 32N80P Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = IT, pulse test 23 38 S 8800 pF 700 pF Crss 26 pF td(on) 30 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 24 ns td(off) RG = 2 Ω (External) 85 ns 24 ns 150 nC 40 nC 44 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Qgd ISOPLUS 247 OUTLINE 0.42 ° C/W RthJC ° C/W 0.15 RthCs Source-Drain Diode Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 32 A ISM Repetitive 70 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25A, -di/dt = 100 A/µs 250 ns QRM IRM VR = 100V 0.8 6.0 µC A Note: Test current IT = 16A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFR 32N80P Fig. 1. Output Characte r is tics Fig. 2. Exte nde d Output Char acte ris tics @ 25º C @ 25 º C 35 70 V GS = 10V V GS = 10V 30 25 50 5V I D - Amperes I D - Amperes 7V 60 6V 20 15 10 5 6V 40 5V 30 20 10 4V 4V 0 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 V D S - V olts Fig. 3. Output Characte r is tics 25 30 3.1 35 V GS = 10V R D S ( o n ) - Normalized 5V 25 20 15 10 V GS = 10V 2.8 6V 30 I D - Amperes 20 Fig. 4. RDS(on ) Norm alize d to ID = 16A V alue vs . Junction Te m pe r atur e @ 125º C 4V 5 2.5 2.2 1.9 I D = 32A 1.6 I D = 16A 1.3 1.0 0.7 0 0.4 0 3 6 9 12 15 18 21 -50 24 -25 V D S - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to Fig . 6. Dr ain C u r r e n t vs . C as e T e m p e r atu r e ID = 16A V alue vs . Dr ain Cur re nt 2.8 20 2.6 V GS = 10V 18 TJ = 125 º C 2.4 16 2.2 14 I D - Amperes R D S ( o n ) - Normalized 15 V D S - V olts 2.0 1.8 1.6 1.4 1.2 12 10 8 6 4 TJ = 25 º C 1.0 2 0.8 0 0 10 20 30 40 I D - A mperes © 2006 IXYS All rights reserved 50 60 70 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFR 32N80P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 45 70 40 60 50 25 - Siemens 30 TJ = 125 º C 25 º C 20 15 30 fs -40 º C 40 g I D - Amperes 35 TJ = -40 º C 20 25 º C 10 125 º C 10 5 0 0 3 3.5 4 4.5 0 5 5 10 15 V G S - V olts 25 30 35 40 45 Fig. 10. Gate Char ge 100 10 90 9 V DS = 400V 80 8 I D = 16A 70 7 I G = 10m A V G S - Volts I S - Amperes Fig. 9. Sour ce Cur re nt vs . Sour ce -To-Drain V oltage 60 50 40 20 I D - A mperes TJ = 125 º C 30 5 4 3 TJ = 25 º C 20 6 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 V S D - V olts 20 40 60 Q G 80 100 120 140 160 - nanoCoulombs Fig. 12. M axim um Tr ans ie nt The r m al Re s is tance Fig. 11. Capacitance 100000 1.00 C iss 10000 R ( t h ) J C - ºC / W Capacitance - picoFarads f = 1MH z C oss 1000 0.10 100 C rs 0.01 10 0 5 10 15 20 25 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 Pulse Width - milliseconds 1000 IXFR 32N80P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R ( t h ) J C - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds © 2006 IXYS All rights reserved 0.1 1 10