PolarHTTM HiPerFET Power MOSFET IXFH 100N25P VDSS = 250 V ID25 = 100 A Ω RDS(on) ≤ 27 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 100 A ID(RMS) External lead current limit IDM TC = 25°C, pulse width limited by TJM IAR 75 A 250 A TC = 25°C 60 A EAR TC = 25°C 60 mJ EAS TC = 25°C 2.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω 10 V/ns PD TC = 25°C 600 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque TO-247 (IXFH) G D G = Gate S = Source 5.5 (TAB) D = Drain TAB = Drain Features z z z z 1.13/10 Nm/lb.in. Weight S Fast Intrinsic Diode International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect g Advantages z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 250 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved Easy to mount Space savings High power density V 5.0 V ±100 nA 25 500 μA μA 27 mΩ DS99344E(03/06) IXFH 100N25P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 40 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 56 S 6300 pF 1150 pF 240 pF 25 ns 26 ns 100 ns 28 ns 185 nC 43 nC 91 nC Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 td(off) RG = 3.3 Ω (External) tf 1 2 3 Terminals: 1 - Gate 3 - Source Dim. Qg(on) Qgs TO-247 (IXFH) Outline VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.21 °C/W RthJC RthCS °C/W 0.25 Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 100 A ISM Repetitive 250 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr QRM IRM IF = 25 A, -di/dt = 100 A/μs VR = 100 V 0.6 10 Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 200 ns μC A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXFH 100N25P Fig. 2. Exte nde d Output Characte r is tics @ 25ºC Fig. 1. Output Characte r is tics @ 25ºC 250 100 V GS = 10V 9V 8V 90 80 9V 200 175 ID - Amperes 70 ID - Amperes V GS = 10V 225 60 50 7V 40 30 6V 20 8V 150 125 100 7V 75 50 6V 10 25 5V 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 2 4 6 8 Fig. 3. Output Characte r is tics @ 125ºC 14 16 18 20 2.8 V GS = 10V 9V 8V 80 V GS = 10V 2.6 2.4 RDS(on) - Normalized 90 70 ID - Amperes 12 Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe ratur e 100 7V 60 50 40 30 6V 20 2.2 2 1.8 I D = 100A 1.6 1.4 I D = 50A 1.2 1 10 0.8 5V 0 0.6 0 1 2 3 4 5 6 7 -50 -25 V DS - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alize d to Fig. 6. Dr ain Cur re nt vs . Cas e Te m pe ratur e 0.5 ID25 V alue vs . ID 3.4 90 V GS = 10V 3.1 80 External Lead C urrent Lim it 70 2.5 TJ = 125ºC 2.2 1.9 1.6 1.3 ID - Amperes 2.8 RDS(on) - Normalized 10 V DS - V olts V DS - V olts 60 50 40 30 20 TJ = 25ºC 1 0.7 10 0 0 25 50 75 100 125 150 175 200 225 250 ID - A mperes © 2006 IXYS All rights reserved -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH 100N25P Fig. 8. Transconductance Fig. 7. Input Adm ittance 150 90 80 125 TJ = -40ºC 25ºC 125ºC 100 gfs - Siemens ID - Amperes 70 75 50 TJ = 125ºC 25ºC -40ºC 25 60 50 40 30 20 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 0 25 50 75 V GS - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 125 150 175 200 Fig. 10. Gate Charge 10 300 VDS = 125V 9 250 I D = 50A 8 I G = 10mA 7 200 VG S - Volts IS - Amperes 100 ID - Amperes 150 100 6 5 4 3 TJ = 125ºC 2 TJ = 25ºC 50 1 0 0 0.4 0.6 0.8 1 1.2 0 1.4 20 40 60 V SD - Volts 80 100 120 140 160 180 200 QG - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 1000 10000 TJ = 150ºC TC = 25ºC C iss ID - Amperes Capacitance - picoFarads R DS(on) Limit 1000 C oss 100µs 100 25µs 1ms 10ms DC 10 f = 1MHz C rss 100 1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V DS - Volts 1000 IXFH 100N25P Fig. 13. Maxim um Transient Therm al Resistance R(th)JC - ºC/W 1.00 0.10 0.01 1 10 100 Pulse Width - milliseconds © 2006 IXYS All rights reserved 1000