PolarHVTM HiPerFET Power MOSFET IXFN 100N50P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 IDRMS IDM TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM 90 75 250 A A A IAR TC = 25° C 100 A EAR TC = 25° C 100 mJ EAS TC = 25° C 5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω 20 V/ns PD TC = 25° C 1040 W Maximum Ratings -55 ... +150 150 -55 ... +150 °C °C °C 300 2500 3000 °C V~ V~ TJ TJM Tstg TL VISOL 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤1 mA t=1s Md Mounting torque Terminal connection torque Weight SOT-227B 1.5 / 13 Nm/lb.in. 1.5 / 13 Nm/lb.in. 30 g Symbol Test Conditions (TJ = 25° C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 3 mA 500 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT, Note 1 © 2006 IXYS All rights reserved TJ = 125° C = = ≤ ≤ V 5.0 V ±200 nA 25 2000 µA µA 49 mΩ 500 V 90 A Ω 49 mΩ 200 ns miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride l l l isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99497E(01/06) IXFN 100N50P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. VDS = 20 V; ID = IT, Note 1 gfs 50 80 S 20 nF 1700 pF 140 pF 36 ns 29 ns 110 ns 26 ns 240 nC 96 nC 78 nC Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT td(off) RG = 1 Ω (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Qgd SOT-227B Outline 0.12 ° C/W RthJC ° C/W 0.05 RthCS Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 100 A ISM Repetitive 250 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25A, -di/dt = 100 A/µs 200 ns QRM IRM VR = 100V 0.6 6.0 µC A Notes: 1. Pulse test, t ≤300 µs, duty cycle d≤ 2 % Test current IT = 50 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFN 100N50P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 100 220 V GS = 10V 8V 90 180 80 160 70 7V 60 I D - Amperes I D - Amperes V GS = 10V 9V 200 50 40 6V 30 8V 140 120 100 7V 80 60 20 40 10 20 5V 0 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 2 4 6 8 100 18 20 22 24 26 2.5 R DS(on) - Normalized I D - Amperes 16 V GS = 10V 2.8 70 60 50 6V 40 30 2.2 1.9 I D = 100A 1.6 I D = 50A 1.3 1 20 5V 0.7 10 0.4 0 0 1 2 3 4 5 6 7 8 9 10 -50 11 -25 0 25 50 75 100 125 150 T J - Degrees Centigrade V DS - Volts Fig. 5. R DS(on) Normalized to ID = 50A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3 90 V GS = 10V 2.8 External Lead Current Limit 80 TJ = 125ºC 2.6 70 2.4 2.2 I D - Amperes R DS(on) - Normalized 14 3.1 V GS = 10V 8V 7V 80 12 Fig. 4. R DS(on) Normalized to ID = 50A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 90 10 V DS - Volts V DS - Volts 2 1.8 1.6 60 50 40 30 1.4 TJ = 25ºC 20 1.2 10 1 0.8 0 0 20 40 60 80 100 120 I D - Amperes © 2006 IXYS All rights reserved 140 160 180 200 220 -50 -25 0 25 50 75 T J - Degrees Centigrade 100 125 150 IXFN 100N50P Fig. 8. Transconductance Fig. 7. Input Admittance 150 160 135 140 120 120 g f s - Siemens I D - Amperes 105 100 TJ = 125ºC 25ºC - 40ºC 80 60 TJ = - 40ºC 25ºC 125ºC 90 75 60 45 40 30 20 15 0 0 4 4.5 5 5.5 6 6.5 7 0 7.5 20 40 60 V GS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 225 250 Fig. 10. Gate Charge 300 10 V DS = 250V 9 250 I D = 50A 8 I G = 10mA 7 200 V GS - Volts I S - Amperes 80 I D - Amperes 150 100 TJ = 125ºC 6 5 4 3 2 TJ = 25ºC 50 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 25 50 V SD - Volts 75 100 125 150 175 200 Q G - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1,000 RDS(on) Limit C iss 25µs 10,000 I D - Amperes Capacitance - PicoFarads f = 1 MHz C oss 1,000 100µs 100 1ms 10ms 10 DC TJ = 150ºC C rss TC = 25ºC 100 1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V DS - Volts 1000 IXFN 100N50P Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 Pulse W idth - Seconds © 2006 IXYS All rights reserved 1 10