HiPerFETTM Power MOSFET Q2-Class IXFR38N80Q2 VDSS ID25 RDS(on) trr = = ≤ ≤ 800V 28A Ω 240mΩ 250ns (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 800 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 28 A IDM TC = 25°C, pulse width limited by TJM 150 A IA TC = 25°C 38 A EAS TC = 25°C 4 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 500 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ FC Mounting force 20..120/4.5..27 N/lb. 5 g Weight ISOPLUS247 (IXFR) E153432 Isolated Tab G = Gate S = Source D = Drain Features • Double metal process for low gate resistance • Silicon chip on DCB substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Epoxy meet UL 94 V-0, flammability classification • Avalanche energy and current rated • Fast intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 800 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 19A, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved • Easy assembly • Space savings • High power density V 5.5 V ± 200 nA 25 μA 2 mA 240 mΩ DS99203A(05/08) IXFR38N80Q2 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 19A, Note 1 25 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss ISOPLUS247 (IXFR) Outline 37 S 9500 pF 888 pF 185 pF td(on) Resistive Switching Times 20 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 19A 16 ns td(off) RG = 1Ω (External) 60 ns 12 ns 190 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 19A Qgd 44 nC 88 nC 0.25 °C/W RthJC RthCS 0.15 Source-Drain Diode TJ = 25°C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM °C/W Characteristic Values Min. Typ. Max. 38 A Repetitive, pulse width limited by TJM 150 A IF = IS, VGS = 0V, Note 1 1.5 V 250 ns IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1 μC 10 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR38N80Q2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 40 90 VGS = 10V 35 70 30 6V 25 20 I D - Amperes I D - Amperes VGS = 10V 7V 80 5.5V 15 10 60 6V 50 40 30 5.5V 20 5 5V 5V 10 0 0 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 12 Fig. 3. Output Characteristics @ 125ºC 21 24 27 30 3.2 VGS = 10V 6V VGS = 10V 2.8 R D S ( o n ) - Normalized 35 30 I D - Amperes 18 Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature 40 5.5V 25 20 5V 15 10 2.4 ID = 38A 2.0 ID = 19A 1.6 1.2 0.8 5 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 V D S - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to 0.5 I D25 Value Fig. 6. Drain Current vs. Case Temperature vs. I D 2.8 30 2.6 27 VGS = 10V 2.4 TJ = 125ºC 24 2.2 21 I D - Amperes R D S ( o n ) - Normalized 15 VD S - Volts VD S - Volts 2.0 1.8 1.6 1.4 18 15 12 9 1.2 6 TJ = 25ºC 1.0 3 0.8 0 0 10 20 30 I 40 D 50 60 - Amperes © 2008 IXYS CORPORATION, All rights reserved 70 80 90 -50 -25 0 25 50 75 100 T C - Degrees Centigrade IXFR38N80Q2 Fig. 7. Input Admittance Fig. 8. Transconductance 80 60 55 60 45 TJ = 125ºC 25ºC - 40ºC 40 35 g f s - Siemens I D - Amperes TJ = - 40ºC 70 50 30 25 20 50 25ºC 40 125ºC 30 15 20 10 10 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 10 20 VG S - Volts Fig. 9. Source Current vs.Source-To-Drain Voltage 10 110 9 VDS = 400V 100 8 ID = 19A 7 IG = 10m A 80 VG S - Volts I S - Amperes 90 70 60 50 50 60 70 6 5 4 3 TJ = 125ºC 30 40 D - Amperes Fig. 10. Gate Charge 120 40 30 I 2 TJ = 25ºC 20 1 10 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 20 40 60 V S D - Volts 80 100 120 140 160 180 200 QG - nanoCoulombs Fig. 12. M aximum Transie nt The rmal Impe dance Fig. 11. Capacitance 1.000 100,000 C iss Z( t h ) J C - ºC / W Capacitance - picoFarads f = 1MHz 10,000 C oss 1,000 0.100 0.010 C rss 100 0.001 0 5 10 15 20 25 30 35 40 V D S - Volts 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_38N80Q2(94)5-28-08-A