PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS(on) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient ± 20 ± 30 V V ID25 IL IDM TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM 86 100 250 A A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 88 60 5 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω 10 V/ns PD TC = 25°C 570 W -55 ... +150 150 -55 ... +150 °C °C °C Features 300 °C z TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source Md 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000 Mounting torque Terminal connection torque 1.5 / 13 Nm/lb.in. 1.5 / 13 Nm/lb.in. Weight 30 Symbol Test Conditions (TJ = 25°C unless otherwise specified) VGS = 0 V, ID = 250 μA 300 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ± 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V V 5.0 V ± 200 nA 25 250 μA μA 33 mΩ z z z z TJ = 125°C International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25, Note 1 © 2006 IXYS All rights reserved g Characteristic Values Min. Typ. Max. BVDSS RDS(on) V~ V~ D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. z VISOL = 300 V = 86 A ≤ 33 mΩ Ω ≤ 200 ns Easy to mount Space savings High power density DS99248E(06/06) IXFN102N30P Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, Note 1 45 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss 57 S 7500 pF 1150 pF 230 pF Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A td(off) RG = 3.3 Ω (External) 30 ns 28 ns 130 ns 30 ns 224 nC 50 nC 110 nC tf Qg(on) VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgs Qgd SOT-227B Outline 0.22 °C/W RthJC RthCS °C/W 0.05 Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 102 A ISM Repetitive 250 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25 A, -di/dt = 100 A/μs 200 ns QRM VR = 100 V, VGS = 0 V IRM 0.8 μC 6 A Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 Fig. 2. Exte nde d Output Characte r is tics @ 25ºC Fig. 1. Output Characte r is tics @ 25ºC 250 110 V GS = 10V 9V 8V 100 90 9V 200 80 175 70 ID - Amperes ID - Amperes V GS = 10V 225 60 7V 50 40 7V 125 100 75 6V 30 8V 150 6V 20 50 10 5V 25 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 V DS - V olts Fig. 3. Output Characte r is tics @ 125ºC 4 8 10 12 V DS - V olts 14 16 18 20 2.8 V GS = 10V 9V 8V 90 2.6 V GS = 10V 2.4 RDS(on) - Normalized 100 80 7V 70 60 50 6V 40 30 20 2.2 2 1.8 1.6 I D = 102A 1.4 I D = 51A 1.2 1 0.8 10 5V 0.6 0 0.4 0 1 2 3 4 5 6 7 8 9 -50 -25 V DS - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to Fig . 6. Dr ain Cu r r e n t vs . C as e T e m p e r atu r e ID = 51A V alue vs . Dr ain Cur re nt 2.6 90 V GS = 10V 2.4 80 2.2 70 TJ = 125ºC 2 ID - Amperes RDS(on) - Normalized 6 Fig. 4. RDS(on ) Norm alize d to ID = 51A V alue vs . Junction Te m pe r atur e 110 ID - Amperes 2 1.8 1.6 1.4 1.2 60 50 40 30 20 TJ = 25ºC 1 10 0 0.8 0 25 50 75 100 125 150 175 200 225 250 ID - A mperes © 2006 IXYS All rights reserved -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFN102N30P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 100 150 90 80 TJ = -40ºC 25ºC 125ºC 70 100 gfs - Siemens ID - Amperes 125 75 50 TJ = 125ºC 25ºC -40ºC 25 60 50 40 30 20 10 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 7.5 25 50 75 V GS - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 125 150 175 200 Fig. 10. Gate Char ge 10 300 V DS = 150V 9 250 I D = 51A 8 I G = 10m A 7 200 V G S - Volts IS - Amperes 100 ID - A mperes 150 100 6 5 4 3 TJ = 125ºC 2 TJ = 25ºC 50 1 0 0 0.4 0.6 0.8 1 1.2 0 1.4 25 50 V SD - V olts 100 125 150 175 200 225 Fig . 12. Fo r w ar d -Bias Safe Ope r ating Ar e a Fig. 11. Capacitance 10000 1000 R DS (on) Lim it ID - Amperes C iss Capacitance - picoFarads 75 QG - nanoCoulombs 1000 C oss 25µs 100 100µs 1m s 10m s 10 DC f = 1MH z TJ = 150ºC C rs s TC = 25ºC 100 1 0 5 10 15 20 25 30 35 40 V DS - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - V olts 1000 Fig. 13. M axim um Trans ie nt The rm al Re s is tance R(th)JC - ºC/W 1.000 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds © 2006 IXYS All rights reserved 1 10