IXYS IXFR102N30P

PolarHTTM HiPerFET IXFR 102N30P
Power MOSFET
VDSS = 300 V
ID25 = 60 A
RDS(on) ≤ 36 m Ω
≤ 200 ns
trr
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25° C to 150° C
300
V
VDGR
TJ = 25° C to 150° C; RGS = 1 MΩ
300
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25° C
60
A
IDM
TC = 25° C, pulse width limited by TJM
250
A
IAR
TC = 25° C
60
A
EAR
TC = 25° C
60
mJ
EAS
TC = 25° C
2.5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
10
V/ns
PD
TC = 25° C
250
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
2500
°C
V~
TJ
TJM
Tstg
TL
VISOL
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
FC
Mounting force
22..130/5..29
Weight
N/lb
5
g
ISOPLUS247 (IXFR)
E153432
G
G = Gate
S = Source
BVDSS
VGS = 0 V, ID = 250 µA
300
VGS(th)
VDS = VGS, ID = 4 mA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 51 A
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
TJ = 125° C
D = Drain
Advantages
l
Characteristic Values
Min. Typ.
Max.
(Isolated Tab)
S
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
D
l
Easy to mount
Space savings
High power density
V
5.0
V
±200
nA
25
250
µA
µA
36
mΩ
DS99247E(12/05)
IXFR 102N30P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 51 A, pulse test
45
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
57
S
7500
pF
1150
pF
230
pF
Crss
td(on)
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 51 A
td(off)
RG = 3.3 Ω (External)
30
ns
28
ns
130
ns
30
ns
224
nC
50
nC
110
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 51 A
Qgd
ISOPLUS247 Outline
0.5 ° C/W
RthJC
RthCS
° C/W
0.15
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
102
A
ISM
Repetitive
250
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
QRM
IRM
IF = 25 A, -di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
0.8
7
200 ns
µC
Α
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
IXFR 102N30P
Fig. 2. Exte nde d Output Characte r is tics
@ 25ºC
Fig. 1. Output Characte r is tics
@ 25ºC
250
110
V GS = 10V
9V
8V
100
90
9V
200
80
175
70
60
ID - Amperes
ID - Amperes
V GS = 10V
225
7V
50
40
6V
30
20
8V
150
7V
125
100
75
6V
50
10
5V
25
0
0
0.5
1
1.5
2
2.5
3
3.5
5V
0
4
0
V DS - V olts
Fig. 3. Output Characte r is tics
@ 125ºC
4
6
8
10
12
V DS - V olts
14
16
18
20
Fig. 4. RDS(on ) Norm alize d to ID = 51A
V alue vs . Junction Te m pe r atur e
2.8
110
V GS = 10V
9V
8V
90
2.6
V GS = 10V
2.4
80
RDS(on) - Normalized
100
ID - Amperes
2
7V
70
60
50
6V
40
30
20
2.2
2
1.8
1.6
I D = 102A
1.4
I D = 51A
1.2
1
0.8
10
0.6
5V
0
0.4
0
1
2
3
4
5
V DS - V olts
6
7
8
-50
9
Fig. 5. RDS(on) Nor m alize d to
25
50
75
100
125
150
Fig . 6. Dr ain Cu r r e n t vs . C as e
T e m p e r atu r e
70
V GS = 10V
2.4
0
TJ - Degrees Centigrade
ID = 51A V alue vs . Dr ain Cur re nt
2.6
-25
60
50
TJ = 125ºC
2
ID - Amperes
RDS(on) - Normalized
2.2
1.8
1.6
1.4
40
30
20
1.2
TJ = 25ºC
1
10
0
0.8
0
25
50
75
100 125 150 175 200 225 250
ID - A mperes
© 2006 IXYS All rights reserved
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFR 102N30P
Fig. 8. Trans conductance
Fig. 7. Input Adm ittance
150
100
90
80
TJ = -40ºC
25ºC
125ºC
70
100
gfs - Siemens
ID - Amperes
125
75
50
TJ = 125ºC
25ºC
-40ºC
25
60
50
40
30
20
10
0
0
3.5
4
4.5
5
5.5
6
6.5
7
7.5
0
25
50
75
V GS - V olts
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
125
150
175
200
Fig. 10. Gate Char ge
10
300
V DS = 150V
9
250
I D = 51A
8
I G = 10m A
7
200
V G S - Volts
IS - Amperes
100
ID - A mperes
150
100
6
5
4
3
TJ = 125ºC
2
TJ = 25ºC
50
1
0
0
0.4
0.6
0.8
1
1.2
V SD - V olts
0
1.4
25
50
75
100
125
150
175
200
225
QG - nanoCoulombs
Fig. 12. Fo r w ar d -Bias
Safe Ope r atin g Ar e a
Fig. 11. Capacitance
1000
10000
R DS (on) Lim it
ID - Amperes
Capacitance - picoFarads
C iss
1000
C oss
25µs
100
100µs
1m s
10
10m s
f = 1MH z
TJ = 150ºC
C rs s
DC
TC = 25ºC
1
100
0
5
10
15
20
25
V DS - V olts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
100
V D S - V olts
1000
IXFR 102N30P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
R(th)JC - ºC/W
1.00
0.10
0.01
1
10
100
Pulse Width - milliseconds
© 2006 IXYS All rights reserved
1000