IXYS IXFR180N15P

PolarHVTM HiPerFET
Power MOSFET
IXFR 180N15P
VDSS
ID25
RDS(on)
trr
ISOPLUS247TM
(Electrically Isolated Back Surface)
=
=
≤
≤
150 V
100 A
Ω
13 mΩ
200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
VDSS
TJ = 25° C to 175° C
150
V
VDGR
TJ = 25° C to 175° C; RGS = 1 MΩ
150
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25° C
100
A
ID(RMS)
External Lead current limit
75
A
IDM
TC = 25° C, pulse width limited by TJM
380
A
IAR
TC = 25° C
60
A
EAR
TC = 25° C
100
mJ
EAS
TC = 25° C
4
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
10
V/ns
PD
Maximum Ratings
TJ
TJM
Tstg
1.6 mm (0.062 in.) from case for 10 s
VISOL
50/60 Hz, RMS, 1 minute
Fd
Mounting force
W
-55 ... +175
175
-55 ... +150
°C
°C
°C
l
V~
l
20..120 / 4.5..26
N/lb
l
5
g
VGS = 0 V, ID = 250 µA
150
VGS(th)
VDS = VGS, ID = 4 mA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS, VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT , Note 1
TJ = 150° C
l
2500
Characteristic Values
Min. Typ.
Max.
V
5.0
V
±100
nA
25
1.5
µA
mA
13
mΩ
S
ISOLATED TAB
D = Drain
Features
°C
VDSS
© 2006 IXYS All rights reserved
300
D
G = Gate
S = Source
300
Weight
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
G
l
TC = 25° C
TL
ISOPLUS247 (IXFR)
E153432
l
International standard isolated
package
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Advantages
l
l
l
Easy to mount
Space savings
High power density
DS99242(01/06)
IXFR 180N15P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
86
S
7000
pF
2250
pF
Crss
515
pF
td(on)
30
ns
gfs
VDS = 10 V; ID = IT, Notes 1, 2
55
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 60A
td(off)
RG = 3.3 Ω (External)
32
ns
150
ns
36
ns
240
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
55
nC
140
nC
ISOPLUS247 Outline
0.5 ° C/W
RthJC
° C/W
0.15
RthCS
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
180
A
ISM
Repetitive
380
A
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
trr
IF = 25A, -di/dt = 100 A/µs
200
ns
QRM
VR = 100V, VGS = 0V
0.6
µC
6
A
IRM
Notes:
1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;
2. Test current IT = 90 A.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFR 180N15P
Fig. 1. Output Char acte r is tics
@ 25 ºC
Fig. 2. Exte nde d Output Char acte r is tics
@ 25 ºC
180
320
V GS = 10V
160
140
9V
240
120
8V
I D - Amperes
I D - Amperes
V GS = 10V
280
9V
100
80
7V
60
200
8V
160
120
7V
80
40
6
20
40
0
0
0.4
0.8
1.2
1.6
6V
0
2
0
V D S - V olts
Fig. 3. Output Char acte ris tics
@ 150 ºC
180
2.6
4
5
6
V D S - V olts
7
8
9
10
V GS = 10V
2.4
R D S ( o n ) - Normalized
I D - Amperes
3
2.8
140
8
120
100
80
7V
60
6V
40
20
2.2
2
I D = 180A
1.8
1.6
I D = 90A
1.4
1.2
1
0.8
5V
0
0.6
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
V D S - V olts
-25
0
25
50
75
100
125
150
175
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Nor m alize d to ID = 90A
V alue vs . Dr ain Curr e nt
Fig. 6. Dr ain Cur r e nt vs . Cas e
Te m pe r atur e
3.4
90
3.1
2.8
70
2.5
2.2
V GS = 10V
1.9
V GS = 15V
1.6
TJ = 25 ºC
1.3
Ex ternal Lead C urrent Lim it
80
TJ = 175 ºC
I D - Amperes
R D S ( o n ) - Normalized
2
Fig. 4. RDS(on ) Nor m alize d to ID = 90A
V alue vs . Junction Te m pe ratur e
V GS = 10V
9V
160
1
60
50
40
30
20
1
10
0.7
0
0
50
100
150
200
I D - A mperes
© 2006 IXYS All rights reserved
250
300
350
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
IXFR 180N15P
Fig. 8. Tr ans conductance
Fig. 7. Input Adm ittance
120
250
TJ = -40 ºC
225
100
200
80
- Siemens
150
125
fs
100
60
TJ = 150 ºC
75
40
g
I D - Amperes
175
25 ºC
50
20
-40 ºC
25
25 ºC
150 ºC
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
0
9
25
50
75
100 125 150 175 200 225 250
V G S - V olts
I D - A mperes
Fig. 9. Sour ce Cur r e nt vs .
Sour ce -To-Dr ain V oltage
Fig. 10. Gate Char ge
10
350
300
V DS = 75V
8
I D = 90A
I G = 10m A
7
V G S - Volts
I S - Amperes
250
9
200
150
TJ = 150 ºC
100
6
5
4
3
2
TJ = 25 ºC
50
1
0
0
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
V S D - V olts
50
75
Q
100 125 150 175 200 225 250
G
- nanoCoulombs
Fig. 12. For w ar d-Bias
Safe Ope r ating Ar e a
Fig. 11. Capacitance
1000
100,000
f = 1M Hz
R DS (on) Lim it
Cis
10,000
I D - Amperes
Capacitance - picoFarads
25
Cos
1,000
25µs
100µs
100
1m s
10m s
10
Crs
DC
TJ = 175 ºC
TC = 25 ºC
100
1
0
5
10
15
20
25
V DS - V olts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
100
V D S - V olts
1000
IXFR 180N15P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
R( t h ) J C - ºC / W
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width -Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_180N15P (88) 03-23-06-C.xls