ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 VDSS = 100 V ID25 = 60 A Ω RDS(on) = 16.4 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1 60 A ID90 TC = 90°C, Note 1 45 A IS25 TC = 25°C; Note 1, 2 60 A IS90 TC = 90°C, Note 1, 2 45 A ID(RMS) Package lead current limit 45 A EAS TC = 25°C tlb mJ PD TC = 25°C 150 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +150 °C 300 °C 2500 V~ TJ TL 1.6 mm (0.062 in.) from case for 10 s VISOL RMS leads-to-tab, 50/60 Hz, t = 1 minute FC Mounting force 11 ... 65 / 2.4 ...11 2 Weight N/lb g G D S Isolated back surface* G = Gate, S = Source D = Drain, * Patent pending Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(<15pF) l Unclamped Inductive Switching (UIS) rated Applications Automotive 42V systems - electronic switches to replace relays and fuses - choppers to replace series dropping resistors used for motors, heaters, etc. - inverters for AC drives, e.g. starter generator - DC-DC converters, e.g. 12V to 42V, etc. l Power supplies - DC - DC converters - Solar inverters l Battery powered systems - choppers or inverters for motor control in hand tools - battery chargers l Symbol Test Conditions RDS(on) VGS = 10 V, ID = 45 A, Note 3 VGS = 10 V, ID = ID90, TJ = 125°C Note 3 VGS(th) VDS = VGS, ID = 1 mA IDSS VDS = VDSS VGS = 0 V IGSS VGS = ±20 VDC, VDS = 0 © 2002 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 12.8 33 2 TJ = 25°C TJ = 125°C 16.4 mΩ mΩ 4 V 10 µA mA ±200 nA 0.2 Advantages l Easy assembly: no screws or isolation foils required l Space savings l High power density 98900 (2/02) IXUC 60N10 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 110 Qg(on) Qgs VGS = 10 V, VDS = 80 V, ID = 25 A Qgd td(on) tr VGS = 10 V, VDS = 40 A td(off) ID = 90 A, RG = 4.7 Ω nC 18 nC 94 nC 35 ns 85 ns 150 ns 70 ns tf 1 RthJC 0.30 RthCH Source-Drain Diode ISOPLUS220 OUTLINE K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VSD IF = 30 A, VGS = 0 V Note 3 0.8 trr IF = 75 A, di/dt = -200 A/µs, VDS = 30 V 80 1.3 V ns Note: 1. MOSFET chip capability 2. Intrinsic diode capability 3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Note: All terminals are solder plated. 1 - Gate 2 - Drain 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 6,306,728B1 5,381,025