JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT4124 TRANSISTOR（ NPN ） SOT—23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR １．０ Power dissipation PCM： 0.33W（Tamb=25℃） Collector current ICM：0.2A Collector-base voltage V (BR) CBO： 30V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ０．９５ ０．４ ０．９５ １．９ ２．９ ２．４ １．３ Unit : mm ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol unless Test otherwise conditions Collector-base breakdown voltage V(BR)CBO Ic=10μA， Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN TYP MAX UNIT 30 V Ic= 1mA， IB=0 25 V V(BR)EBO IE= 10μA， IC=0 5 V Collector cut-off current ICBO VCB= 20 V , IE=0 0.05 μA Emitter cut-off current IEBO VEB= 3V , 0.05 μA DC current gain HFE IE=0 specified） IC=0 VCE= 1V, IC= 2mA 120 360 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=50 mA, IB= 5mA 0.95 V fT Transition frequency Marking FMMT4124： 2C VCE=20V, IC= 10mA f =100MHz 300 MHz