JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L MMBTA44 TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES 0.35 W (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current 0.2 A ICM: Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range 2. 80¡ À0. 05 2. 92¡ À0. 05 PCM: 0. 95¡ À0. 025 Power dissipation TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=400V, IE=0 0.1 µA Collector cut-off current ICEO VCE=400V 5 µA Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 µA HFE(1) VCE=10V, IC=10 mA 80 HFE(2) VCE=10V, IC=1mA 70 HFE(3) VCE=10V, IC=100 mA 60 VCE(sat) IC=10 mA, IB=1mA 0.2 V VCE(sat) IC=50 mA, IB=5mA 0.3 V VBE(sat) IC=10 mA, IB= 1 mA 0.75 V DC current gain 300 Collector-emitter saturation voltage Base-emitter sataration voltage VCE=20V, IC=10mA Transition f frequency 50 T f =30MHz MARKING 3D MHz