JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) TO-92 BC338, -16,-25,-40 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 2. BASE W (Tamb=25℃) 3. EMITTER Collector current 0.8 A ICM: Collector-base voltage BC337 50 V VCBO: BC338 30 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Collector-base breakdown voltage VCBO unless otherwise specified) Test conditions MIN TYP MAX UNIT Ic= 100µA, IE=0 BC337 50 V BC338 30 V 45 V 25 V 5 V IC= 10 mA , IB=0 Collector-emitter breakdown voltage BC337 VCEO BC338 Emitter-base breakdown voltage VEBO Collector cut-off current ICBO IE= 10µA, IC=0 BC337 VCB= 45 V, IE=0 0.1 µA BC338 VCB= 25V, IE=0 0.1 µA VCE= 40 V, IB=0 0.2 µA VCE= 20 V, IB=0 0.2 µA IEBO VEB= 4 V, IC=0 0.1 µA hFE(1) VCE=1V, IC= 100mA HFE(2) VCE=1V, IC= 300mA Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50 mA 0.7 V Base-emitter saturation voltage VBE(sat) IC= 500 mA, IB=50 mA 1.2 V Collector cut-off current BC337 ICEO BC338 Emitter cut-off current DC current gain BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 100 100 160 250 60 630 250 400 630 VCE= 5V, IC= 10mA Transition frequency fT 210 f = 100MHz MHz