JIANGSU CHANGJIANG ELECTRONICS INDUSTIAL CO., LTD SOT-23 Plastic-Encapsulate Transistors S9016LT1 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR 1. 0 Power dissipation mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.025 A ICM: Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 0. 95 200 1. 9 PCM: Unit: mm TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=30V, IE=0 0.1 µA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 µA HFE(1) VCE=5V, IC= 1mA VCE(sat) IC=10mA, IB= 1mA DC current gain Collector-emitter saturation voltage fT Transition frequency DEVICE MARKING S9016LT1= Y6 VCE=5V, IC= 1mA f=100MHz 70 200 0.3 300 V MHz