JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3880S 1. BASE TRANSISTOR (NPN) 2. EMITTER 3. COLLECTOR mW (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 20 mA ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 0. 95 150 1. 9 PCM: 1. 0 FEATURES Power dissipation Unit: mm TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS( Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 4 V Collector cut-off current ICBO VCB=18V, IE=0 0.5 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.5 µA DC current gain hFE(1) VCE=6V, IC=1mA fT VCE=6V, IC=1mA 500 MHz Collector output capacitance Cob VCB=6V, IE=0, f=1MHz 1 pF Noise figure NF VCE=6V, Ic=1mA, f=100MHZ Transition frequency 40 200 5 CLASSIFICATION OF hFE(1) Rank R O Y Range 40-80 70-140 100-200 Marking AQR AQO AQY dB