JIANGSU KTC3880S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
KTC3880S
1. BASE
TRANSISTOR (NPN)
2. EMITTER
3. COLLECTOR
mW (Tamb=25℃)
2. 4
1. 3
0. 95
0. 4
2. 9
Collector current
20
mA
ICM:
Collector-base voltage
40
V
V(BR)CBO:
Operating and storage junction temperature range
0. 95
150
1. 9
PCM:
1. 0
FEATURES
Power dissipation
Unit: mm
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS( Tamb=25℃
Parameter
Symbol
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=100µA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=1mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
4
V
Collector cut-off current
ICBO
VCB=18V, IE=0
0.5
µA
Emitter cut-off current
IEBO
VEB=4V, IC=0
0.5
µA
DC current gain
hFE(1)
VCE=6V, IC=1mA
fT
VCE=6V, IC=1mA
500
MHz
Collector output capacitance
Cob
VCB=6V, IE=0, f=1MHz
1
pF
Noise figure
NF
VCE=6V, Ic=1mA, f=100MHZ
Transition frequency
40
200
5
CLASSIFICATION OF hFE(1)
Rank
R
O
Y
Range
40-80
70-140
100-200
Marking
AQR
AQO
AQY
dB