SAMHOP STU2030PLS

S T U/D2030P LS
S amHop Microelectronics C orp.
Aug 20 2005
P -C hannel E nhancement Mode Field E ffect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
-30V
-20A
R DS (ON)
( m W ) Max
S uper high dense cell design for low R DS (ON ).
R ugged and reliable.
32 @ V G S = -10V
TO-252 and TO-251 P ackage.
55 @ V G S = -4.5V
D
D
G
D
G
S
S TU S E R IE S
TO-252AA(D-P AK)
S
G
S TU S E R IE S
TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
-30
V
Gate-S ource Voltage
V GS
20
V
Drain C urrent-C ontinuous @ Tc=25 C
a
-P ulsed
ID
-20
A
IDM
-60
A
Drain-S ource Diode Forward C urrent
IS
-20
A
Maximum P ower Dissipation @ Tc=25 C
PD
50
W
T J , T S TG
-55 to 175
C
Thermal R esistance, Junction-to-C ase
R JC
3
C /W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W
Operating Junction and S torage
Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
1
S T U/D2030P LS
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
5
Condition
S ymbol
Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = -250uA
Zero Gate Voltage Drain Current
IDS S
V DS = -20V, V GS = 0V
-1
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
100 nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = -250uA
Drain-S ource On-S tate R esistance
R DS (ON)
On-S tate Drain Current
ID(ON)
gFS
-25
V
uA
ON CHAR ACTE R IS TICS a
Forward Transconductance
-1.7
-3
V
V GS = -10V, ID = -20A
27
32
m ohm
V GS =-4.5V, ID = -10A
41
55
m ohm
V DS = -10V, V GS = -10V
V DS = -10V, ID= -10A
-1
-30
A
14
S
950
PF
250
PF
170
PF
2.6
ohm
10
ns
22
ns
68.8
ns
38.5
ns
18.5
nC
9.6
nC
nC
nC
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
Gate resistance
Rg
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (10V)
Total Gate Charge (4.5V)
V DS =-15V, V GS = 0V
f =1.0MH Z
V GS =0V, V DS = 0V, f=1.0MH Z
b
tD(ON)
tr
tD(OFF)
V DD = -15V
ID = -1 A
V GS = -10V
R GE N = 6 ohm
tf
V DS =-15V, ID = -20A
V GS =-10V
Qg
Gate-S ource Charge
Q gs
1.6
Gate-Drain Charge
Q gd
5.8
2
S T U/D2030P LS
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
Min Typ Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Diode Forward Voltage
-0.9
V GS = 0V, Is = -10A
VSD
-1.3
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
25
20
20
V G S =-4.5V
-I D , Drain C urrent (A)
-I D , Drain C urrent(A)
V G S =-4V
V G S =-5V
15
V G S =-8V
10
V G S =-3V
V G S =-10V
5
0
0
15
10
T j=125 C
5
0
0.5
1
2
1.5
2.5
3
0
-V DS , Drain-to-S ource Voltage (V )
1.4
2.1
2.8
3.5
4.2
F igure 2. Trans fer C haracteris tics
60
R DS (ON) , On-R es is tance
Normalized
1.6
50
R DS (on) (m W)
0.7
-V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
V G S =-4.5V
40
30
V G S =-10V
20
10
0
-55 C
25 C
0
5
10
15
20
1.4
1.2
1.0
0.8
V G S =-4.5V
I D =-10A
0.6
0.4
-55
25
V G S =-10V
I D =-20A
-25
0
25
50
75
100 125
T j( C )
-I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
3
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
V
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.3
V DS =V G S
I D =-250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
1.15
I D =-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
120
20.0
25 C
I D =-20A
-Is , S ource-drain current (A)
100
R DS (on) (m W)
6
V th, Normalized
G ate-S ource T hres hold V oltage
S T U/D2030P LS
80
75 C
60
125 C
40
25 C
20
0
125 C
10.0
75 C
1.0
0
2
4
6
8
10
0.4
-V G S , G ate- S ource Voltage (V )
0.6
0.8
1.0
1.2
1.4
-V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S T U/D2030P LS
C is s
C , C apacitance (pF )
1000
800
600
400
C os s
200
C rs s
0
0
5
10
V DS =-15V
I D =-20A
8
6
4
2
0
10
15
20
25
30
0
3
6
-V DS , Drain-to S ource Voltage (V )
9
12
15
18
21 24
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
70
T D(on)
10
V DS =-15V ,ID=-1A
1
V G S =-10V
1
6 10
L im
1s
1
0m
ms
s
DC
V G S =-10V
S ingle P ulse
T c=25 C
0.1
R g, G ate R es is tance ( W)
10
10
10
0.03
60 100 300 600
it
50
N)
Tf
(O
T D(off)
S
-I D , Drain C urrent (A)
Tr
100
60
RD
220
S witching T ime (ns )
6
-V G S , G ate to S ource V oltage (V )
1200
1
10
30
60
-V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
5
F igure 10. Maximum S afe
O perating Area
S T U/D2030P LS
V DD
ton
V IN
D
tf
90%
90%
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
RL
10%
INVE R TE D
10%
6
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
D=0.5
0.2
0.1
0.1
P DM
0.05
t1
0.02
1.
2.
3.
4.
0.01
S ING LE P ULS E
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t2
R θJ A (t)=r (t) * R θJ A
R θJ A =S ee Datas heet
T J M-T A = P DM* R θJ A (t)
Duty C ycle, D=t1/t2
1
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
6
10
S T U/D2030P LS
7
S T U/D2030P LS
5
95
7
84
L2
9
6.00
35
05
85
0.94
4
3
0
9
36
2.29
9.70
1.425
0.650
0.600
BSC
1
1.625
0.850
REF.
0.090
82
56
6
0.024
8
9
7
30
3
3
41
3
3
5
1
4
BSC
398
0.064
33
REF.
S T U/D2030P LS
TO251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
" A"
TO-252 Carrier Tape
UNIT:㎜
PACKAGE
TO-252
(16 ㎜)
A0
6.80
±0.1
B0
K0
10.3
±0.1
2.50
±0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ψ2
ψ1.5
+ 0.1
- 0
16.0
0.3±
1.75
0.1±
7.5
±0.15
8.0
±0.1
4.0
±0.1
2.0
±0.15
0.3
±0.05
TO-252 Reel
S
UNIT:㎜
TAPE SIZE
16 ㎜
REEL SIZE
M
N
W
T
H
ψ 330
ψ330
± 0.5
ψ97
± 1.0
17.0
+ 1.5
- 0
2.2
ψ13.0
+ 0.5
- 0.2
9
K
S
10.6
2.0
±0.5
G
R
V