S T U/D428S S amHop Microelectronics C orp. Mar.8,2007 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS (ON ). R DS (ON) ( m Ω ı ) T yp ID R ugged and reliable. S urface Mount P ackage. E S D P rotected. 8 @ V G S = 10V 40V 50A 10 @ V G S = 4.5V D D G D G S S TU S E R IE S TO-252AA(D-P AK) G S S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V ID 50 A IDM 100 A IS 20 A PD 50 W TJ, TSTG -55 to 175 C Thermal Resistance, Junction-to-Case R JC 3 C /W Thermal Resistance, Junction-to-Ambient R JA 50 C /W Parameter Drain Current-Continuous @TC=25 C a -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Operating and Storage Temperature Range THERMAL CHARACTERISTICS 1 S T U/D428S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 32V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1.7 3 V Drain-S ource On-S tate R esistance R DS (ON) V GS =10V, ID = 10A 8 10 m ohm V GS =4.5V, ID= 6A 10 13 m ohm OFF CHAR ACTE R IS TICS 40 V ON CHAR ACTE R IS TICS a V DS = 10V, V GS = 10V ID(ON) gFS On-S tate Drain Current Forward Transconductance 1 30 A 26 S 1505 PF 220 PF 150 PF 0.3 ohm 23 ns 19 ns 85 ns 27 ns V DS =15V, ID =10A,V GS =10V 28 nC V DS =15V, ID =10A,V GS =4.5V 12.5 nC 3 nC nC V DS = 10V, ID = 10A DYNAMIC CHAR ACTE R IS TICS b Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS Gate resistance Rg S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =20V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z b tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 15V ID = 1 A V GS = 10V R GE N = 6 ohm V DS =15V, ID = 10A V GS =10V 2 6 S T U/D428S E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage 0.95 V GS = 0V, Is = 10A VSD 1.3 Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 60 20 V G S =4V T j =125 C VG S=4.5 V 40 I D , Drain C urrent (A) ID , Drain C urrent(A) 50 VG S =10V 30 20 V G S =3V 10 V G S =2.5V 0 15 -55 C 10 25 C 5 0 0 0.5 1 2 1.5 2.5 3 0 V DS , Drain-to-S ource Voltage (V ) 2.4 3.2 4.0 4.8 F igure 2. Trans fer C haracteris tics 2.0 12 R DS (ON) , On-R es is tance Normalized 15 R DS (on) (m Ω ı ) 1.6 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics V G S =4.5V 9 V G S =10V 6 3 1 0.8 1.8 1.6 12 24 36 48 60 V G S =4.5V I D =6A 1.2 1.0 0 1 V G S =10V I D =10A 1.4 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 30 20.0 I D =10 A Is , S ource-drain current (A) 25 R DS (on) (m Ω ı ) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U/D428S 20 75 C 15 125 C 10 25 C 5 0 10.0 5.0 75 C 125 C 25 C 1.0 0 2 4 6 8 10 0 V G S , G ate- S ource Voltage (V ) 0.24 0.48 0.72 0.96 1.2 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T U/D428S V G S , G ate to S ource V oltage (V ) 2400 1600 C is s 1200 800 400 C os s C rs s 0 5 V DS =15V I D =10A 8 6 4 2 0 0 10 15 20 25 30 0 5 10 V DS , Drain-to S ource Voltage (V ) 15 20 25 30 35 40 Qg, T otal G ate C harge (nC ) F igure 10. G ate C harge F igure 9. C apacitance 600 10 V DS =15V ,ID=1A 1 V G S =10V 1 6 10 10 R g, G ate R es is tance (ı Ω ) 10 10 DC 1 0.5 0.1 60 100 300 600 1m it 100 L im Tf N) T D(on) (O Tr S T D(off) I D , Drain C urrent (A) ) 100 60 RD 220 S witching T ime (ns ) 6 C , C apacitance (pF ) 2000 10 0m s ms s 1s V G S =10V S ingle P ulse T c=25 C 1 10 30 60 V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 5 F igure 12. Maximum S afe O perating Area S T U/D428S V DD ton V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL 10% INVE R TE D 10% 6 G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 14. S witching Waveforms F igure 13. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 15. Normalized T hermal T rans ient Impedance C urve 6 10 S T U/D428S 7 S T U/D428S 5 95 7 84 L2 9 6.00 35 05 85 0.94 4 3 0 9 36 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF . 0.090 82 56 6 0.024 8 9 7 30 3 3 41 3 3 5 1 4 BSC 398 0.064 33 REF . S T U/D428S TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube " A" TO-252 Carrier Tape UNIT: ȱ PACKAGE A0 TO-252 (16 ȱ+ 6.80 㨼0.1 B0 K0 10.3 㨼0.1 2.50 㨼0.1 D0 D1 ᭑2 ᭑1.5 + 0.1 - 0 E E1 E2 P0 P1 P2 T 16.0 0.3 㨼 1.75 0.1 㨼 7.5 㨼0.15 8. 0 㨼0.1 4. 0 㨼0.1 2.0 㨼0.15 0.3 㨼0.05 TO-252 Reel S UNIT: ȱ TAPE SIZE 16 ȱ REEL SIZE M N W T H ᭑ 330 ᭑330 㨼 0.5 ᭑97 㨼 1.0 17.0 + 1.5 - 0 2.2 ᭑13.0 + 0.5 - 0.2 9 K S 10.6 2.0 㨼0.5 G R V