Green Product S amHop Microelectronics C orp. S T S 4300 AP R .25 2006 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable. 62 @ V G S = 10V 40V S OT-23 package. 3.5A 80 @ V G S =4.5V D S OT-23 D G S G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol Limit Unit Drain-S ource Voltage V DS 40 V Gate-S ource Voltage V GS 20 V 3.5 2.7 A A IDM 15 A IS 1.25 A P arameter Drain C urrent-C ontinuous @ Ta -P ulsed 25 C 70 C a Drain-S ource Diode Forward C urrent ID Ta= 25 C Maximum P ower Dissipation 1.25 PD 0.76 Ta=70 C Operating Junction and S torage Temperature R ange T J , T S TG W -55 to 150 C 100 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 S T S 4300 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 32V, V GS = 0V Gate-Body Leakage IGS S V GS = 20V, V DS = 0V Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) Min Typ C Max Unit OFF CHAR ACTE R IS TICS 40 V 1 uA 100 nA 1.6 3.0 V V GS = 10V, ID = 3.5A 54 62 m-ohm V GS = 4.5V, ID = 2.8A 68 80 m-ohm ON CHAR ACTE R IS TICS b ID(ON) gFS On-S tate Drain Current Forward Transconductance V DS = 5V, V GS = 4.5V V DS = 5V, ID =3.5A 1 10 A 9 S 320 PF 55 PF 32 PF 6.6 ns 3.9 ns 15.7 ns 3.3 ns 6 nC 0.8 nC 1.5 nC DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time V DS =15V, V GS = 0V f =1.0MH Z c tD(ON) tr Turn-Off Delay Time tD(OFF) Fall Time Total Gate Charge tf Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 15V, ID = 1A, V GS = 10V, R L = 15 ohm R GE N = 6 ohm V DS =15V, ID = 3.5A, V GS =10V 2 S T S 4300 E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage 0.82 V GS = 0V, Is = 1.25A VSD 1.3 Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing. 10 10 V G S =4V 8 V G S =3.5V V G S =4.5V I D , Drain C urrent (A) ID , Drain C urrent(A) 8 6 V G S =10V 4 V G S =3V 2 0 6 T j=125 C 4 -55 C 0 0 0.5 1 2 1.5 2.5 3 0 V DS , Drain-to-S ource Voltage (V ) 1.4 2.1 2.8 3.5 4.2 F igure 2. Trans fer C haracteris tics 90 R DS (ON) , On-R es is tance Normalized 2.0 75 V G S =4.5V R DS (on) (m Ω) 0.7 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 60 45 V G S =10V 30 15 0 25 C 2 0 2 4 6 8 1.8 1.4 1.2 V G S =4.5V I D =2.8A 1.0 0.8 10 V G S =10V I D =3.5A 1.6 0 25 50 75 100 125 150 175 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 1.15 1.10 I D =250uA 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 180 20.0 I D =3.5A Is , S ource-drain current (A) 150 R DS (on) (m Ω) 6 V th, Normalized G ate-S ource T hres hold V oltage S T S 4300 120 125 C 75 C 90 60 25 C 30 0 10.0 125 C 25 C 75 C 1.0 0 2 4 6 8 10 0.6 V G S , G ate- S ource Voltage (V ) 0.8 1.0 1.2 1.4 1.6 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T S 4300 V G S , G ate to S ource V oltage (V ) 420 C is s 280 210 140 C os s 70 C rs s 0 V DS =15V I D =3.5A 8 6 4 2 0 0 5 10 15 20 25 30 0 1 V DS , Drain-to S ource Voltage (V ) 2 3 4 5 6 7 8 Qg, T otal G ate C harge (nC ) F igure 9. C apacitance 50 I D , Drain C urrent (A) 220 S witching T ime (ns ) 6 C , C apacitance (pF ) 350 10 100 60 T D(off) Tr 10 T D(on) Tf V DS =15V ,ID=1A 1 10 RD 60 100 300 600 it 1m s ms 1s DC 0.1 V G S =10V S ingle P ulse T c=25 C 0.1 R g, G ate R es is tance ( Ω) im 1 0.03 6 10 )L 10 V G S =10V 1 ON S( 1 10 20 50 V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 5 F igure 10. Maximum S afe O perating Area S T S 4300 V DD ton 5 V IN D tf 90% 90% V OUT V OUT VG S RGE N toff td(off) tr td(on) RL INVE R TE D 10% 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit Thermal Resistance Normalized Transient 10 1 0.5 0.2 0.1 P DM 0.1 t1 t2 0.05 0.02 Single Pulse 0.01 0.01 0.00001 1. 2. 3. 4. 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 6 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T S 4300 A M F G L J B C I H E D (TYP.) F 3/81 4/21 3/51 3/91 1/217 1/1:5 1/221 2/51 2/71 1/166 1/174 1/46 1/61 1/125 1/131 1 1/21 1 1/115 1/56 1/66 1/133 1/129 1/186!SFG/ 2/11 1/21 2/41 1/31 1/14: 1/115 1/51 . 1/127 1/156 21± 2/:1!SFG/ G I J L 1/56 2/26 1/144 M 1± 21± 1± 7 1/233 1/162 1/119 . S T S 4300 SOT-23 Tape and Reel Data SOT-23 Carrier Tape TR FEED DIRECTION UNIT:р PACKAGE SOT-23 A0 B0 K0 D0 D1 E 8.00 +0.30 -0.10 E1 E2 P0 P1 P2 T 1.75 ²0.10 3.50 ²0.05 4.00 ²0.10 4.00 ²0.10 2.00 ²0.05 0.20 ²0.02 1.33 ²0.10 О1.00 +0.25 REEL SIZE M N W W1 H K S G R V О178 О178 ²1 О60 ²1 9.00 ²0.5 12.00 ²0.5 О13.5 !!²0.5 10.5 2.00 ²0.5 О10.0 5.00 18.00 3.20 ²0.10 3.00 ²0.10 О1.50 +0.10 SOT-23 Reel UNIT:р TAPE SIZE 8р 8