STS4300

Green
Product
S amHop Microelectronics C orp.
S T S 4300
AP R .25 2006
N-C hannel E nhancement Mode Field E ffect Trans is tor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON)
S uper high dense cell design for low R DS (ON ).
( m Ω ) Max
R ugged and reliable.
62 @ V G S = 10V
40V
S OT-23 package.
3.5A
80 @ V G S =4.5V
D
S OT-23
D
G
S
G
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
40
V
Gate-S ource Voltage
V GS
20
V
3.5
2.7
A
A
IDM
15
A
IS
1.25
A
P arameter
Drain C urrent-C ontinuous @ Ta
-P ulsed
25 C
70 C
a
Drain-S ource Diode Forward C urrent
ID
Ta= 25 C
Maximum P ower Dissipation
1.25
PD
0.76
Ta=70 C
Operating Junction and S torage
Temperature R ange
T J , T S TG
W
-55 to 150
C
100
C /W
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
R JA
1
S T S 4300
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 32V, V GS = 0V
Gate-Body Leakage
IGS S
V GS = 20V, V DS = 0V
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
Drain-S ource On-S tate R esistance
R DS (ON)
Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
40
V
1
uA
100
nA
1.6
3.0
V
V GS = 10V, ID = 3.5A
54
62
m-ohm
V GS = 4.5V, ID = 2.8A
68
80
m-ohm
ON CHAR ACTE R IS TICS b
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
V DS = 5V, V GS = 4.5V
V DS = 5V, ID =3.5A
1
10
A
9
S
320
PF
55
PF
32
PF
6.6
ns
3.9
ns
15.7
ns
3.3
ns
6
nC
0.8
nC
1.5
nC
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
V DS =15V, V GS = 0V
f =1.0MH Z
c
tD(ON)
tr
Turn-Off Delay Time
tD(OFF)
Fall Time
Total Gate Charge
tf
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = 15V,
ID = 1A,
V GS = 10V,
R L = 15 ohm
R GE N = 6 ohm
V DS =15V, ID = 3.5A,
V GS =10V
2
S T S 4300
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
Min Typ Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Diode Forward Voltage
0.82
V GS = 0V, Is = 1.25A
VSD
1.3
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
10
10
V G S =4V
8
V G S =3.5V
V G S =4.5V
I D , Drain C urrent (A)
ID , Drain C urrent(A)
8
6
V G S =10V
4
V G S =3V
2
0
6
T j=125 C
4
-55 C
0
0
0.5
1
2
1.5
2.5
3
0
V DS , Drain-to-S ource Voltage (V )
1.4
2.1
2.8
3.5
4.2
F igure 2. Trans fer C haracteris tics
90
R DS (ON) , On-R es is tance
Normalized
2.0
75
V G S =4.5V
R DS (on) (m Ω)
0.7
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
60
45
V G S =10V
30
15
0
25 C
2
0
2
4
6
8
1.8
1.4
1.2
V G S =4.5V
I D =2.8A
1.0
0.8
10
V G S =10V
I D =3.5A
1.6
0
25
50
75
100
125
150 175
T j( C )
I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
3
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
V
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.3
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
1.15
1.10
I D =250uA
1.05
1.00
0.95
0.90
0.85
-50 -25
100 125 150
0
25
50
75
100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
180
20.0
I D =3.5A
Is , S ource-drain current (A)
150
R DS (on) (m Ω)
6
V th, Normalized
G ate-S ource T hres hold V oltage
S T S 4300
120
125 C
75 C
90
60
25 C
30
0
10.0
125 C
25 C
75 C
1.0
0
2
4
6
8
10
0.6
V G S , G ate- S ource Voltage (V )
0.8
1.0
1.2
1.4
1.6
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S T S 4300
V G S , G ate to S ource V oltage (V )
420
C is s
280
210
140
C os s
70
C rs s
0
V DS =15V
I D =3.5A
8
6
4
2
0
0
5
10
15
20
25
30
0
1
V DS , Drain-to S ource Voltage (V )
2
3
4
5
6
7
8
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
50
I D , Drain C urrent (A)
220
S witching T ime (ns )
6
C , C apacitance (pF )
350
10
100
60
T D(off)
Tr
10
T D(on)
Tf
V DS =15V ,ID=1A
1
10
RD
60 100 300 600
it
1m
s
ms
1s
DC
0.1
V G S =10V
S ingle P ulse
T c=25 C
0.1
R g, G ate R es is tance ( Ω)
im
1
0.03
6 10
)L
10
V G S =10V
1
ON
S(
1
10
20
50
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
5
F igure 10. Maximum S afe
O perating Area
S T S 4300
V DD
ton
5
V IN
D
tf
90%
90%
V OUT
V OUT
VG S
RGE N
toff
td(off)
tr
td(on)
RL
INVE R TE D
10%
10%
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
Thermal Resistance
Normalized Transient
10
1
0.5
0.2
0.1
P DM
0.1
t1
t2
0.05
0.02
Single Pulse
0.01
0.01
0.00001
1.
2.
3.
4.
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
6
10
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
S T S 4300
A
M
F
G
L
J
B
C
I
H
E
D (TYP.)
F
3/81
4/21
3/51
3/91
1/217
1/1:5
1/221
2/51
2/71
1/166
1/174
1/46
1/61
1/125
1/131
1
1/21
1
1/115
1/56
1/66
1/133
1/129
1/186!SFG/
2/11
1/21
2/41
1/31
1/14:
1/115
1/51
.
1/127
1/156
21±
2/:1!SFG/
G
I
J
L
1/56
2/26
1/144
M
1±
21±
1±
7
1/233
1/162
1/119
.
S T S 4300
SOT-23 Tape and Reel Data
SOT-23 Carrier Tape
TR
FEED DIRECTION
UNIT:р
PACKAGE
SOT-23
A0
B0
K0
D0
D1
E
8.00
+0.30
-0.10
E1
E2
P0
P1
P2
T
1.75
²0.10
3.50
²0.05
4.00
²0.10
4.00
²0.10
2.00
²0.05
0.20
²0.02
1.33
²0.10
О1.00
+0.25
REEL SIZE
M
N
W
W1
H
K
S
G
R
V
О178
О178
²1
О60
²1
9.00
²0.5
12.00
²0.5
О13.5
!!²0.5
10.5
2.00
²0.5
О10.0
5.00
18.00
3.20
²0.10
3.00
²0.10
О1.50
+0.10
SOT-23 Reel
UNIT:р
TAPE SIZE
8р
8