S T S 8201 S amHop Microelectronics C orp. J an. 03 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( mW ) Max R ugged and reliable. 27 @ V G S = 4.0V 20V 5A S urface Mount P ackage. E S D P rotected. 40 @ V G S = 2.5V S1 D1/D2 S2 1 2 3 D2 D1 S OT26 Top View 6 G1 5 4 D1/D2 G1 G2 G2 S1 S2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter S ymbol Limit Unit Drain-S ource Voltage V DS 20 V Gate-S ource Voltage V GS 12 V ID 5 A IDM 20 A Drain-S ource Diode Forward C urrent a IS 1.25 A Maximum P ower Dissipation a PD 1.25 W Drain C urrent-C ontinuous @ T J =25 C -P ulsed b Operating Junction and S torage Temperature R ange T J , T S TG -55 to 150 C R JA 100 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 S T S 8201 E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 16V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 12V,V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 0.8 1.5 V Drain-S ource On-S tate R esistance R DS (ON) V GS = 4.0V, ID = 5A 22 27 m ohm V GS =2.5V, ID = 3A 30 40 m ohm V DS = 5V, ID =5A 19 S 720 PF 195 PF 147 PF 34 ns 68 ns 104 ns OFF CHAR ACTE R IS TICS 20 V ON CHAR ACTE R IS TICS b gFS Forward Transconductance 0.5 DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =8V, V GS = 0V f =1.0MH Z CRSS c tD(ON) tr tD(OFF) V DD = 10V, ID = 1A, V GE N = 4.0V, R GE N= 10 ohm Fall Time tf 43 ns Total Gate Charge Qg 12 nC Gate-S ource Charge Q gs 2.3 nC Gate-Drain Charge Q gd 5.5 nC V DS =10V, ID = 5A, V GS =4.0V 2 S T S 8201 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage 0.8 V GS = 0 V, Is = 1.25A VSD 1.2 Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 15 15 V G S =4V 12 V G S =2.5V I D , Drain C urrent (A) ID , Drain C urrent(A) 12 V G S =2V 9 6 V G S =1.5V 3 0 0 9 6 -55 C 3 T j=125 C 0 0.5 1 2 1.5 2.5 3 0 V DS , Drain-to-S ource Voltage (V ) 1.5 2.0 2.5 3.0 F igure 2. Trans fer C haracteris tics 1.8 R DS (ON) , On-R es is tance Normalized 60 50 R DS (on) (m W) 1.0 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 40 V G S =2.5V 30 20 V G S =4V 10 0 0.5 25 C 1.6 1.4 V G S =2.5V I D =3A 1.2 V G S =4V I D =5A 1.0 0.8 1 3 6 9 12 15 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.6 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 60 15.0 I D =5A 12.0 Is , S ource-drain current (A) 50 R DS (on) (m W) 6 V th, Normalized G ate-S ource T hres hold V oltage S T S 8201 125 C 40 75 C 25 C 30 20 10 0 0 2 2.5 3 3.5 9.0 6.0 75 C 25 C 1.0 0 4 V G S , G ate-S ource Voltage (V ) 125 C 3.0 0.4 0.8 1.2 1.6 2.0 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T S 8201 C is s 600 450 300 150 C os s C rs s 5 V DS =10V I D =5A 4 3 2 1 0 0 0 2 V DS , Drain-to S ource Voltage (V ) 6 4 8 10 12 14 16 Qg, T otal G ate C harge (nC ) F igure 10. G ate C harge F igure 9. C apacitance 80 100 60 I D , Drain C urrent (A) 600 S witching T ime (ns ) 6 C , C apacitance (pF ) 750 V G S , G ate to S ource V oltage (V ) 900 T D (o ff) Tr Tf T D (on) 10 V DS =10V ,ID=1A 1 VGS= 4 V 1 6 10 10 R )L im i t 10 1 DC 0.1 0m ms s 1s V G S =4V S ingle P ulse T A =25 C 0.1 R g, G ate R es is tance ( W) (O N 10 0.03 60 100 300 600 DS 1 10 30 50 V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 5 F igure 12. Maximum S afe O perating Area S T S 8201 V DD ton 5 V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL INVE R TE D 10% 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit Thermal Resistance Normalized Transient 10 1 0.5 0.2 P DM 0.1 0.1 t1 0.05 on 0.02 0.01 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 6 10 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T S 8201 PA C K A G E O U T L I N E D I M E N S I O N S SOT26 7 S T S 8201 SOT26 Tape and Reel Data SOT26 Carrier Tape SOT26 Reel 8