SAMHOP STS8201

S T S 8201
S amHop Microelectronics C orp.
J an. 03 2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON)
S uper high dense cell design for low R DS (ON ).
( mW ) Max
R ugged and reliable.
27 @ V G S = 4.0V
20V
5A
S urface Mount P ackage.
E S D P rotected.
40 @ V G S = 2.5V
S1
D1/D2
S2
1
2
3
D2
D1
S OT26
Top View
6
G1
5
4
D1/D2
G1
G2
G2
S1
S2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
20
V
Gate-S ource Voltage
V GS
12
V
ID
5
A
IDM
20
A
Drain-S ource Diode Forward C urrent a
IS
1.25
A
Maximum P ower Dissipation a
PD
1.25
W
Drain C urrent-C ontinuous @ T J =25 C
-P ulsed
b
Operating Junction and S torage
Temperature R ange
T J , T S TG
-55 to 150
C
R JA
100
C /W
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
S T S 8201
E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted)
Parameter
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 16V, V GS = 0V
1
uA
Gate-Body Leakage
IGS S
V GS = 12V,V DS = 0V
10
uA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
0.8
1.5
V
Drain-S ource On-S tate R esistance
R DS (ON)
V GS = 4.0V, ID = 5A
22
27
m ohm
V GS =2.5V, ID = 3A
30
40
m ohm
V DS = 5V, ID =5A
19
S
720
PF
195
PF
147
PF
34
ns
68
ns
104
ns
OFF CHAR ACTE R IS TICS
20
V
ON CHAR ACTE R IS TICS b
gFS
Forward Transconductance
0.5
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =8V, V GS = 0V
f =1.0MH Z
CRSS
c
tD(ON)
tr
tD(OFF)
V DD = 10V,
ID = 1A,
V GE N = 4.0V,
R GE N= 10 ohm
Fall Time
tf
43
ns
Total Gate Charge
Qg
12
nC
Gate-S ource Charge
Q gs
2.3
nC
Gate-Drain Charge
Q gd
5.5
nC
V DS =10V, ID = 5A,
V GS =4.0V
2
S T S 8201
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
Min Typ Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
0.8
V GS = 0 V, Is = 1.25A
VSD
1.2
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
15
15
V G S =4V
12
V G S =2.5V
I D , Drain C urrent (A)
ID , Drain C urrent(A)
12
V G S =2V
9
6
V G S =1.5V
3
0
0
9
6
-55 C
3
T j=125 C
0
0.5
1
2
1.5
2.5
3
0
V DS , Drain-to-S ource Voltage (V )
1.5
2.0
2.5
3.0
F igure 2. Trans fer C haracteris tics
1.8
R DS (ON) , On-R es is tance
Normalized
60
50
R DS (on) (m W)
1.0
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
40
V G S =2.5V
30
20
V G S =4V
10
0
0.5
25 C
1.6
1.4
V G S =2.5V
I D =3A
1.2
V G S =4V
I D =5A
1.0
0.8
1
3
6
9
12
15
0
25
50
75
100
125
150
T j( C )
I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
3
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
V
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.6
V DS =V G S
I D =250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75
100 125 150
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
60
15.0
I D =5A
12.0
Is , S ource-drain current (A)
50
R DS (on) (m W)
6
V th, Normalized
G ate-S ource T hres hold V oltage
S T S 8201
125 C
40
75 C
25 C
30
20
10
0
0
2
2.5
3
3.5
9.0
6.0
75 C
25 C
1.0
0
4
V G S , G ate-S ource Voltage (V )
125 C
3.0
0.4
0.8
1.2
1.6
2.0
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
4
S T S 8201
C is s
600
450
300
150
C os s
C rs s
5
V DS =10V
I D =5A
4
3
2
1
0
0
0
2
V DS , Drain-to S ource Voltage (V )
6
4
8
10
12
14 16
Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
F igure 9. C apacitance
80
100
60
I D , Drain C urrent (A)
600
S witching T ime (ns )
6
C , C apacitance (pF )
750
V G S , G ate to S ource V oltage (V )
900
T D (o ff)
Tr
Tf
T D (on)
10
V DS =10V ,ID=1A
1
VGS= 4 V
1
6 10
10
R
)L
im i
t
10
1
DC
0.1
0m
ms
s
1s
V G S =4V
S ingle P ulse
T A =25 C
0.1
R g, G ate R es is tance ( W)
(O N
10
0.03
60 100 300 600
DS
1
10
30 50
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
5
F igure 12. Maximum S afe
O perating Area
S T S 8201
V DD
ton
5
V IN
D
tf
90%
90%
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
RL
INVE R TE D
10%
10%
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
Thermal Resistance
Normalized Transient
10
1
0.5
0.2
P DM
0.1
0.1
t1
0.05
on
0.02
0.01
0.01
0.00001
1.
2.
3.
4.
Single Pulse
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
6
10
t2
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
S T S 8201
PA C K A G E O U T L I N E D I M E N S I O N S
SOT26
7
S T S 8201
SOT26 Tape and Reel Data
SOT26 Carrier Tape
SOT26 Reel
8